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NE5500179A, NE5500179A-T1, NE5500234-T1

Table of contents:
Info of NE5500179A
Info of NE5500179A-T1
Info of NE5500234-T1

NE5500179A, NE5500179A-T1, NE5500234-T1 Selling Leads, Datasheet

MFG:NEC Package Cooled:N/A D/C:09+

NE5500179A, NE5500179A-T1, NE5500234-T1 Picture

NE5500179A, NE5500179A-T1, NE5500234-T1 Datasheet download

Five Points

Part Number: NE5500179A

MFG: NEC

Package Cooled: N/A

D/C: 09+

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NE5500179A General Description

The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% pozwer added efficiency at 3.5 V, respectively.

NE5500179A Maximum Ratings

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	V_DS	8.5	V
Gate to Source Voltage	V_GSO	5.0	V
Drain Current	I_D	0.25	A
Drain Current (Pulse Test)	I_D^Note	0.5	A
Total Power Dissipation	P_tot	10	W
Channel Temperature	T_ch	125	°C
Storage Temperature	T_stg	−65 to +125	°C

Note Duty Cycle 50%, Ton 1 s

NE5500179A Features

• High output power : P_out = 30.0 dBm TYP. (VDS = 4.8 V, I_Dset= 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High power added efficiency : add = 55% TYP. (V_DS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High linear gain : G_L = 14.0 dB TYP. (VDS = 4.8 V, I_Dset= 200 mA, f = 1.9 GHz, P_in = 10 dBm)
• Surface mount package : 5.7 * 5.7 * 1.1 mm MAX.
• Single supply : V_DS = 3.0 to 6.0 V

NE5500179A Typical Application

• Digital cellular phones : 4.8 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage amplifier
• Digital cordless phones : 3.5 V final stage amplifier for DECT
• Others : General purpose amplifiers for 1.6 to 2.5 GHz TDMA applications

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