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NCR164271JV, NCR169D, NCR1986

NCR164271JV, NCR169D, NCR1986 Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  D/C:09+

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NCR164271JV, NCR169D, NCR1986 Datasheet download

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Part Number: NCR169D

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled:

D/C: 09+

Description: SCR 0.8A 400V TO-92

 

 
 
 
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Datasheet: NCR169D

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Manufacturer: ONSEMI [ON Semiconductor]

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Datasheet: NCR169D

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Datasheet: NCR169D

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Manufacturer: ONSEMI [ON Semiconductor]

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NCR169D Parameters

Technical/Catalog InformationNCR169D
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
SCR TypeSensitive Gate
Voltage - Off State400V
Current - On State (It (RMS) (Max)800mA
Current - On State (It (AV)) (Max)-
Current - Gate Trigger (Igt) (Max)200A
Current - Hold (Ih) (Max)5mA
Current - Non Rep. Surge 50, 60Hz (Itsm)10A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max)800mV
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NCR169D
NCR169D

NCR169D General Description

PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic TO-226AA package.
• Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits
• OnState Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability 10 Amperes
• Immunity to dV/dt 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Device Marking: NCR169D, Date Code

NCR169D Maximum Ratings

Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1.)
(TJ = -40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
VDRM,
VRRM

400

Volts
On-State RMS Current
(TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
ITSM
10
Amps
Circuit Fusing Consideration (t = 10 ms)
I2t
0.415
A2s
Forward Peak Gate Power
(TA = 25°C, Pulse Width 1.0 ms)
PGM
0.1
Watt
Forward Average Gate Power
(TA = 25°C, t = 20 ms)
PG(AV)
0.10
Watt
Forward Peak Gate Current
(TA = 25°C, Pulse Width 1.0 ms)
IGM
1.0
Amp
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width 1.0 ms)
VGRM
5.0
Volts
Operating Junction Temperature Range
@ Rate VRRM and VDRM
TJ
40 to 110
Storage Temperature Range
Tstg
40 to 150

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

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