MFG:Freescale Semiconductor Category:Discrete Semiconductor Products Package Cooled:07+ D/C:07+/08+
MWIC930NR1, MWIC930R1, MWINT840GA Datasheet download
Category: Discrete Semiconductor Products
MFG: Freescale Semiconductor
Package Cooled: 07+
D/C: 07+/08+
Description: MOSFET RF N-CH 28V 30W TO-272-16
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PDF/DataSheet Download
Datasheet: MWIC930NR1
File Size: 446464 KB
Manufacturer: FREESCALE
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MWIC930R1
File Size: 386204 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MWI100-12A8
File Size: 908923 KB
Manufacturer: IXYS [IXYS Corporation]
Download : Click here to Download
| Technical/Catalog Information | MWIC930NR1 |
| Vendor | Freescale Semiconductor (VA) |
| Category | RF and RFID |
| Package / Case | TO-272-16 |
| Voltage - Supply | 26V |
| Current - Supply | 90mA |
| Gain | 30dB |
| Frequency | 900MHz |
| RF Type | Cellular, GSM, EDGE, N-CDMA |
| Packaging | Digi-Reel? |
| Noise Figure | - |
| P1db | - |
| Test Frequency | - |
| Drawing Number | 375; 1329-09; ; 16 |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Compliant |
| Other Names | MWIC930NR1 MWIC930NR1 MWIC930NR1DKR ND MWIC930NR1DKRND MWIC930NR1DKR |
|
Rating |
Symbol |
Value |
Unit |
| Drain−Source Voltage |
VDSS |
−0.5, +65 |
Vdc |
| Gate−Source Voltage |
VGS |
−0.5, +15 |
Vdc |
| Storage Temperature Range |
Tstg |
−65 to +175 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |
Final Application
• Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 =240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921−960 MHz)
Power Gain - 30 dB
Power Added Efficiency - 45%
Driver Application
• Typical Single−Carrier N−CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865−894 MHz), IS −95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain - 31 dB
Power Added Efficiency - 21%
ACPR @ 750 kHz Offset - −52 dBc @ 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• On−Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
• On−Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• N Suffix Indicates Lead−Free Terminations
• 200°C Capable Plastic Package
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
| Technical/Catalog Information | MWIC930R1 |
| Vendor | Freescale Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 28V |
| Current Rating | 240mA |
| Package / Case | TO-272-16 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 375; 1329-09; R; 16 |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MWIC930R1 MWIC930R1 |
The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip integral matching circuitry makes it usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.
|
Rating |
Symbol |
Value |
Unit |
| Drain-Source Voltage |
VDSS |
-0.5. +65 |
Vdc |
| Gate-Source Voltage |
VGS |
-0.5, +15 |
Vdc |
| Storage Temperature Range |
Tstg |
-65 to +175 |
|
| Operating Junction Temperature |
TJ |
175 |
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