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Final Application • Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 =240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921−960 MHz) Power Gain - 30 dB Power Added Efficiency - 45% Driver Application • Typical Single−Carrier N−CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865−894 MHz), IS −95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain - 31 dB Power Added Efficiency - 21% ACPR @ 750 kHz Offset - −52 dBc @ 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power • Characterized with Series Equivalent Large−Signal Impedance Parameters • On−Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On−Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • N Suffix Indicates Lead−Free Terminations • 200°C Capable Plastic Package • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MWIC930GNR1 Connection Diagram
MWIC930GR1 Parameters
Technical/Catalog Information
MWIC930GR1
Vendor
Freescale Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
N-Channel
Voltage - Rated
28V
Current Rating
240mA
Package / Case
TO-272-16 Gull Wing
Packaging
Tape & Reel (TR)
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
MWIC930GR1 MWIC930GR1
MWIC930GR1 General Description
The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescales newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip integral matching circuitry makes it usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.
MWIC930GR1 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5. +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
-65 to +175
Operating Junction Temperature
TJ
175
MWIC930GR1 Features
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power • Characterized with Series Equivalent Large-Signal Impedance Parameters • On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On-Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.