MT3S06T, MT3S06U, MT3S07T Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:04+ D/C:2000
MT3S06T, MT3S06U, MT3S07T Datasheet download
Part Number: MT3S06T
MFG: TOSHIBA
Package Cooled: 04+
D/C: 2000
MFG:TOSHIBA Package Cooled:04+ D/C:2000
MT3S06T, MT3S06U, MT3S07T Datasheet download
MFG: TOSHIBA
Package Cooled: 04+
D/C: 2000
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PDF/DataSheet Download
Datasheet: MT3S06T
File Size: 171332 KB
Manufacturer: Toshiba
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PDF/DataSheet Download
Datasheet: MT3S06U
File Size: 124621 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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PDF/DataSheet Download
Datasheet: MT3S07T
File Size: 210289 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
The MT3S06T is a kind of TOSHIBA transistor(silicon NPN epitaxial planar type).It has two unique features: (1) low noise figure which is 1.6 dB when VCE is 3 V , Ic is 3 mA and f is 2 GHz; (2) high gain which is 9.5 dB when VCE is 3 V , Ic is 7 mA and f is 2 GHz.
The absolute maximum rating of MT3S06T can be summerized as:(1): collector-base voltage, VCBO is 10 V ; (2): collector-emitter voltage, VCEO is 5 V ; (3): emitter-base voltage, VEBO is 1.5 V; (4): base current, Ic is 15 mA; (5): collector current, IB is 7 mA; (6): collector power dissipation, Pc is 60 mW; (7): junction temperature, Tj is 125; (8): storage temperature range, tstg is -55 to 125.
The electrical characteristics of MT3S06T are:(1): collector cut-off current, ICBO is 0.1 uA max when VCB is 5 V and IE is 0; (2): emitter cut-off current, IEBO is 1 uA max when VEB is 1 V and IC is 0; (3): DC current gain, hFE is 70 min and 140 max when VCE is 1 V and IC is 5 mA; (4): reverse transfer capacitance, Cre is 0.25 pF typ and 0.7 pF max when VCB is 1 V and IE is 0 and f is 1 MHz.