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MRFG35010BN, MRFG35010MT1, MRFG35020A

Table of contents:
Info of MRFG35010BN
Info of MRFG35010MT1
Info of MRFG35020A

MRFG35010BN, MRFG35010MT1, MRFG35020A Selling Leads, Datasheet

MFG:Freescale Semiconductor Category:Transistors, FETs, IGBTs Package Cooled:MOT D/C:04+

MRFG35010BN, MRFG35010MT1, MRFG35020A Picture

MRFG35010BN, MRFG35010MT1, MRFG35020A Datasheet download

Five Points

Part Number: MRFG35010BN

Category: Transistors, FETs, IGBTs

MFG: Freescale Semiconductor

Package Cooled: MOT

D/C: 04+

Description: MOSFET RF 3.5GHZ 9W 12V 1.5-PLD

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MRFG35010MT1 Parameters

Technical/Catalog Information	MRFG35010MT1
Vendor	Freescale Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	PLD-1.5
FET Type	N-Channel
Typical RF Application	MMDS
Typical RF Application	UMTS
Typical RF Application	WLL
Drain to Source Voltage (Vdss)	12.0 V [Nom]
Packaging	Tape & Reel, 13"
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MRFG35010MT1 MRFG35010MT1

MRFG35010MT1 General Description

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.

MRFG35010MT1 Maximum Ratings

Rating	Symbol	Value	Unit
DrainSource Voltage	V_DSS	15	Vdc
Total Device Dissipation @ T_C = 25 Derate above 25	P_D	22.7⁽²⁾0.15⁽²⁾	Watts W/
GateSource Voltage	V_GS	5	Vdc
RF Input Power	P_in	33	dBm
Storage Temperature Range	T_stg	65 to +150
Channel Temperature⁽¹⁾	T_ch	175
Operating Case Temperature Range	T_C	20 to +85

MRFG35010MT1 Features

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
   IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @
   0.01% Probability)
       Output Power — 900 mW
       Power Gain — 10 dB
       Efficiency — 28%
• 9 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

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