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MRF7S35120HS, MRF7S35120HSR, MRF7S35120HSR3

Table of contents:
Info of MRF7S35120HS
Info of MRF7S35120HSR
Info of MRF7S35120HSR3

MRF7S35120HS, MRF7S35120HSR, MRF7S35120HSR3 Selling Leads, Datasheet

MFG:Freescale Package Cooled:SMD D/C:08+

MRF7S35120HS, MRF7S35120HSR, MRF7S35120HSR3 Picture

MRF7S35120HS, MRF7S35120HSR, MRF7S35120HSR3 Datasheet download

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Part Number: MRF7S35120HS

MFG: Freescale

Package Cooled: SMD

D/C: 08+

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MRF7S35120HSR General Description

The MRF7S35120HSR is one kind of 3100-3500 MHz, 120 W peak, 32 V pulsed lateral N-channel RF power MOSFETs that designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Features of the MRF7S35120HSR are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)internally matched, controlled Q, for ease of use;(3)high gain, high efficiency and high linearity;(4)integrated ESD protection;(5)designed for maximum gain and insertion phase flatness;(6)excellent thermal stability;(7)characterized with series equivalent large-signal impedance parameters;(8)RoHS compliant.

The absolute maximum ratings of the MRF7S35120HSR can be summarized as:(1)drain-source voltage:-0.5 to +65 Vdc;(2)gate-source voltage:-6.0 to +10 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:225 °C;(5)case operating temperature:150 °C. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .

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