MFG:Freescale Semiconductor Category:Transistors, FETs, IGBTs Package Cooled:SMD D/C:02+
MRF6S9045, MRF6S9045MR1, MRF6S9045NR1 Datasheet download
Category: Transistors, FETs, IGBTs
MFG: Freescale Semiconductor
Package Cooled: SMD
D/C: 02+
Description: MOSFET RF N-CH 28V 10W TO-270-2
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PDF/DataSheet Download
Datasheet: MRF6S9045
File Size: 543729 KB
Manufacturer: FREESCALE [Freescale Semiconductor, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MRF6S9045MR1
File Size: 543729 KB
Manufacturer: FREESCALE [Freescale Semiconductor, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MRF6S9045NR1
File Size: 543729 KB
Manufacturer: FREESCALE [Freescale Semiconductor, Inc]
Download : Click here to Download
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amplifier applications in 28 volt base station equipment.
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
| Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 175 1.0 |
W W/°C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Operating Junction Temperature | TJ | 200 | °C |
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 46% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM ó 1.5% rms
Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 68%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200°C Capable Plastic Package
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
| Technical/Catalog Information | MRF6S9045NR1 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | TO-270-2 |
| FET Type | N-Channel |
| Typical RF Application | CDMA |
| Typical RF Application | TDMA |
| Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
| Power Dissipation | 10.000 W [Max] |
| Packaging | Tape & Reel, 13" |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S9045NR1 MRF6S9045NR1 |
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amplifier applications in 28 volt base station equipment.
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
| Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 175 1.0 |
W W/°C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Operating Junction Temperature | TJ | 200 | °C |
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 46% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM ó 1.5% rms
Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,Full Frequency Band (921-960 MHz) Power Gain ó 20 dB Drain Efficiency ó 68%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
N Suffix Indicates Lead-Free Terminations
200°C Capable Plastic Package
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
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