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MRF6S23100H, MRF6S23100HR, MRF6S23100HR3

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Info of MRF6S23100H
Info of MRF6S23100HR
Info of MRF6S23100HR3

MRF6S23100H, MRF6S23100HR, MRF6S23100HR3 Selling Leads, Datasheet

MFG:Freescale Semiconductor Category:Transistors, FETs, IGBTs D/C:06+

MRF6S23100H, MRF6S23100HR, MRF6S23100HR3 Picture

MRF6S23100H, MRF6S23100HR, MRF6S23100HR3 Datasheet download

Five Points

Part Number: MRF6S23100H

Category: Transistors, FETs, IGBTs

MFG: Freescale Semiconductor

Package Cooled:

D/C: 06+

Description: MOSFET RF N-CHAN 28V 20W NI-780

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MRF6S23100HR3 Parameters

Technical/Catalog Information	MRF6S23100HR3
Vendor	Freescale Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	NI-780
FET Type	N-Channel
Typical RF Application	CDMA
Typical RF Application	TDMA
Drain to Source Voltage (Vdss)	28.0 V [Nom]
Power Dissipation	20.000 W [Max]
Packaging	Tape & Reel, 13"
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF6S23100HR3 MRF6S23100HR3

MRF6S23100HR3 General Description

Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.

MRF6S23100HR3 Maximum Ratings

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	-0.5, +68	Vdc
Gate-Source Voltage	V_GS	-0.5, +12	Vdc
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	330 1.9	W W/°C
Storage Temperature Range	T_stg	-65 to +150	°C
Operating Junction Temperature	T_J	200	°C
CW Operation	CW	100	W

MRF6S23100HR3 Features

Typical 2-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ = 1000 mA,P_out = 20 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain ó 15.4 dB Drain Efficiency ó 23.5% IM3 @ 10 MHz Offset ó -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ó -40.5 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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