MFG:Freescale Semiconductor Category:Transistors, FETs, IGBTs Package Cooled:SMD D/C:08+
MRF6S20010NR1, MRF6S21020LR3, MRF6S21050LR3 Datasheet download
Category: Transistors, FETs, IGBTs
MFG: Freescale Semiconductor
Package Cooled: SMD
D/C: 08+
Description: MOSFET RF N-CH 28V 11.5W NI-400
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PDF/DataSheet Download
Datasheet: MRF6S20010NR1
File Size: 520956 KB
Manufacturer: FREESCALE
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MRF01-J-178
File Size: 108632 KB
Manufacturer: HIROSE [Hirose Electric]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MRF6S21050LR3
File Size: 439995 KB
Manufacturer: FREESCALE [Freescale Semiconductor, Inc]
Download : Click here to Download
| Technical/Catalog Information | MRF6S20010NR1 |
| Vendor | Freescale Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 28V |
| Current Rating | 130mA |
| Package / Case | TO-270-2 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 375; 1265-09; NR; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S20010NR1 MRF6S20010NR1 |
|
Rating |
Symbol |
Value |
Unit |
| Drain−Source Voltage |
VDSS |
−0.5, +68 |
Vdc |
| Gate−Source Voltage |
VGS |
−0.5, +12 |
Vdc |
| Storage Temperature Range |
Tstg |
−65 to +175 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |
| Technical/Catalog Information | MRF6S21050LR3 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | NI-400 |
| FET Type | N-Channel |
| Typical RF Application | CDMA |
| Typical RF Application | TDMA |
| Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
| Power Dissipation | 11.500 W [Max] |
| Packaging | Tape & Reel, 13" |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S21050LR3 MRF6S21050LR3 |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
| Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 151 0.86 |
W W/°C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Operating Junction Temperature | TJ | 200 | °C |
| CW Operation | CW | 50 | W |
Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA,Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain ó 16 dB Drain Efficiency ó 27.7% IM3 @ 10 MHz Offset ó -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ó -40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
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