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Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
216 1.2
W W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
MRF6S18060NR1 Typical Application
GSM Application • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz) Power Gain 15 dB Drain Efficiency - 50% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805-1880 MHz or 1930-1990 MHz) Power Gain 15.5 dB Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -76 dBc EVM 2% rms • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N-Suffix Indicates Lead-Free Terminations • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.