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Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equipment.
MRF6P3300HR3 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Drain-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
761 4.3
W W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Junction Temperature
TJ
200
°C
MRF6P3300HR3 Features
Typical Narrowband Two-Tone Performance @ 860 MHz: VDD = 32 Volts,IDQ= 1600 mA, Pout = 270 Watts PEP Power Gain ó 20.2 dB Drain Efficiency ó 44.1% IMD ó -30.8 dBc Typical Narrowband DVBT OFDM Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM Power Gain ó 20.4 dB Drain Efficiency ó 29% ACPR @ 3.9 MHz Offset ó -57 dBc @ 20 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW Output Power Characterized with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use Designed for Push-Pull Operation Only Qualified Up to a Maximum of 32 VDDOperation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40µ Nominal. Pb-Free and RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRF6P9220HR3 Parameters
Technical/Catalog Information
MRF6P9220HR3
Vendor
Freescale Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
N-Channel
Voltage - Rated
28V
Current Rating
2.4A
Package / Case
NI-860C3
Packaging
Tape & Reel (TR)
Drawing Number
375; 375G-04 ; HR; 5
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
MRF6P9220HR3 MRF6P9220HR3
MRF6P9220HR3 General Description
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amplifier applications in 28 volt base station equipment.
MRF6P9220HR3 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Drain-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
700 4
W W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation
CW
220
W
MRF6P9220HR3 Features
Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts,IDQ = 1600 mA, Pout = 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =9.8 dB @ 0.01% Probability on CCDF.Power Gain ó 20 dB Drain Efficiency ó 30% ACPR @ 750 kHz Offset ó -47.1 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power Characterized with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use Device Designed for Push-Pull Operation Only Qualified Up to a Maximum of 32 VDDOperation Integrated ESD Protection Lower Thermal Resistance Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40µ Nominal. Pb-Free and RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.