MFG:Freescale Semiconductor Category:Discrete Semiconductor Products Package Cooled:SMD D/C:07+
MRF6P27085H, MRF6P27160HR5, MRF6P27160HR6 Datasheet download
Category: Discrete Semiconductor Products
MFG: Freescale Semiconductor
Package Cooled: SMD
D/C: 07+
Description: MOSFET RF N-CHAN 28V 35W NI-1230
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PDF/DataSheet Download
Datasheet: MRF01-J-178
File Size: 108632 KB
Manufacturer: HIROSE [Hirose Electric]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MRF01-J-178
File Size: 108632 KB
Manufacturer: HIROSE [Hirose Electric]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MRF6P27160HR6
File Size: 456913 KB
Manufacturer: FREESCALE [Freescale Semiconductor, Inc]
Download : Click here to Download
| Technical/Catalog Information | MRF6P27160HR5 |
| Vendor | Freescale Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 28V |
| Current Rating | 2.2A |
| Package / Case | NI-1230 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 375; 375D-05; HR; 5 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6P27160HR5 MRF6P27160HR5 |
| Technical/Catalog Information | MRF6P27160HR6 |
| Vendor | Freescale Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 28V |
| Current Rating | 2.2A |
| Package / Case | NI-1230 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 375; 375D-05 ; HR; 5 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6P27160HR6 MRF6P27160HR6 |
Designed for N-CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | -0.5, +68 | Vdc |
| Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 603 3.45 |
W W/°C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Operating Junction Temperature | TJ | 200 | °C |
| CW Operation | CW | 160 | W |
Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 2 x900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain ó 14.6 dB Drain Efficiency ó 22.6% ACPR @ 885 kHz Offset ó -47.8 dBc @ 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
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