Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
427 2.44
W W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
MRF5S9101MR1 Typical Application
GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout =100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout =50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz Power Gain - 18 dB Spectral Regrowth @ 400 kHz Offset = -63 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM - 2.3% rms • Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,@ f = 960 MHz • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead-Free Terminations • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.