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MRF5S19130HSR3, MRF5S19130R3, MRF5S19130R5

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Info of MRF5S19130HSR3
Info of MRF5S19130R3
Info of MRF5S19130R5

MRF5S19130HSR3, MRF5S19130R3, MRF5S19130R5 Selling Leads, Datasheet

MFG:Freescale Semiconductor Category:Discrete Semiconductor Products Package Cooled:MOTOROLA D/C:912

MRF5S19130HSR3, MRF5S19130R3, MRF5S19130R5 Picture

MRF5S19130HSR3, MRF5S19130R3, MRF5S19130R5 Datasheet download

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Part Number: MRF5S19130HSR3

Category: Discrete Semiconductor Products

MFG: Freescale Semiconductor

Package Cooled: MOTOROLA

D/C: 912

Description: MOSFET RF N-CHAN 28V 26W NI-880S

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MRF5S19130HSR3 Parameters

Technical/Catalog Information	MRF5S19130HSR3
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	28V
Current Rating	3A
Package / Case	NI-880S
Packaging	Tape & Reel (TR)
Drawing Number	375; 465C-02 ; HSR; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF5S19130HSR3 MRF5S19130HSR3

MRF5S19130HSR3 Maximum Ratings

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	- 0.5, +65	Vdc
Gate-Source Voltage	V_GS	-0.5, +15	Vdc
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	438 2.50	W W/°C
Storage Temperature Range	T_stg	- 65 to +150	°C
Operating Junction Temperature	T_J	200	°C
CW Operation	CW	110	W

MRF5S19130HSR3 Typical Application

• Typical 2 -Carrier N-CDMA Performance for V_DD = 28 Volts, I_DQ =1200 mA, P_out = 26 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
     Power Gain - 13 dB
     Drain Efficiency - 25%
     IM3 @ 2.5 MHz Offset - -37 dBc @ 1.2288 MHz Bandwidth
     ACPR @ 885 kHz Offset - -51 dB @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,110 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40 Nominal.
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF5S19130R3 Maximum Ratings

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	Vdc
Gate-Source Voltage	V_GS	-0.5, +15	Vdc
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	324 1.85	Watts W/°C
Storage Temperature Range	T_stg	- 65 to +150	°C
Operating Junction Temperature	T_J	200	°C
CW Operation	CW	110	Watts

MRF5S19130R3 Typical Application

• Typical 2 -Carrier N-CDMA Performance for V_DD = 28 Volts,I_DQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
     Output Power- 26 Watts Avg.
     Power Gain - 13 dB
     Efficiency - 25%
     IM3- -37 dBc
     ACPR- -51 dB
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 110 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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