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Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
330 1.89
W W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
MRF19125SR3 General Description
Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF19125SR3 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
+15, 0.5
Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
330 1.89
Watts W/°C
Storage Temperature Range
Tstg
- 65 to +200
°C
Operating Junction Temperature
TJ
200
°C
MRF19125SR3 Features
• Typical 2Carrier NCDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power - 24 Watts Avg. Power Gain - 13.6 dB Efficiency - 22% ACPR - 51 dB IM3 - 37.0 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent LargeSignal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.