MCR12DSM, MCR12DSN, MCR12LD Selling Leads, Datasheet
MFG:ON Package Cooled:TO-252 D/C:2009+
MCR12DSM, MCR12DSN, MCR12LD Datasheet download
Part Number: MCR12DSM
MFG: ON
Package Cooled: TO-252
D/C: 2009+
MCR12DSM, MCR12DSN, MCR12LD
- Table of contents:
Info of MCR12DSM
Info of MCR12DSN
Info of MCR12LD
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About MCR12DSM
PDF/DataSheet Download
Datasheet: MCR12DSM
File Size: 132059 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MCR12DSN
PDF/DataSheet Download
Datasheet: MCR12DSN
File Size: 132059 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MCR12LD
PDF/DataSheet Download
Datasheet: MCR12LD
File Size: 95084 KB
Manufacturer:
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MCR12DSM Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive OffState Voltage (1) Peak Repetitive Reverse Voltage (TJ = 40 to 110°C, RGK = 1.0 K) MCR12DSM MCR12DSN |
VDRM VRRM |
600 800 |
Volts |
|
OnState RMS Current (All Conduction Angles; TC = 75°C) |
IT(RMS) |
12 |
Amps |
|
Average OnState Current (All Conduction Angles; TC = 75°C) |
IT(AV) |
7.6 |
Amps |
|
Peak NonRepetitive Surge Current (One Half Cycle, 60 Hz, TJ = 110°C) |
ITSM |
100 |
Amps |
|
Circuit Fusing Consideration (t = 8.3 msec) |
I2t |
41 |
A2sec |
|
Peak Gate Power (Pulse Width 10 sec, TC = 75°C) |
PGM |
5.0 |
Watts |
|
Average Gate Power (t = 8.3 msec, TC = 75°C) |
PG(AV) |
0.5 |
Watts |
| Peak Gate Current (Pulse Width 10 sec, TC = 75°C) | IGM | 2.0 | Amps |
|
Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are xceeded.
MCR12DSN Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive OffState Voltage (1) Peak Repetitive Reverse Voltage (TJ = 40 to 110°C, RGK = 1.0 K) MCR12DSM MCR12DSN |
VDRM VRRM |
600 800 |
Volts |
|
OnState RMS Current (All Conduction Angles; TC = 75°C) |
IT(RMS) |
12 |
Amps |
|
Average OnState Current (All Conduction Angles; TC = 75°C) |
IT(AV) |
7.6 |
Amps |
|
Peak NonRepetitive Surge Current (One Half Cycle, 60 Hz, TJ = 110°C) |
ITSM |
100 |
Amps |
|
Circuit Fusing Consideration (t = 8.3 msec) |
I2t |
41 |
A2sec |
|
Peak Gate Power (Pulse Width 10 sec, TC = 75°C) |
PGM |
5.0 |
Watts |
|
Average Gate Power (t = 8.3 msec, TC = 75°C) |
PG(AV) |
0.5 |
Watts |
| Peak Gate Current (Pulse Width 10 sec, TC = 75°C) | IGM | 2.0 | Amps |
|
Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are xceeded.
MCR12LD Maximum Ratings
| Rating | Symbol | Value | Unit |
| Peak Repetitive OffState Voltage(1) (TJ = 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12LD MCR12LM MCR12LN |
VDRM, VRRM |
400 600 800 |
Volts |
| On-State RMS Current (180° Conduction Angles; TC = 80°C) |
IT(RMS) | 12 | A |
| Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) |
ITSM | 100 | A |
| Circuit Fusing (t = 8.3 ms) | I2t | 41 | A2sec |
| Forward Average Gate Power (TC = +70°C, t = 8.3 ms) |
PGM | 5.0 | Watts |
| Forward Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) | 0.5 | Amps |
| Forward Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C) |
IGM | 2.0 | Volts |
| Operating Junction Temperature | TJ | 40 to +125 |
°C |
| Storage Temperature Range | Tstg | 40 to +150 |
°C |
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