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MA4X160A, MA4X713, MA4X714

Table of contents:
Info of MA4X160A
Info of MA4X713
Info of MA4X714

MA4X160A, MA4X713, MA4X714 Selling Leads, Datasheet

MFG:Panasonic Package Cooled:2008 D/C:SOT-143

MA4X160A, MA4X713, MA4X714 Datasheet download

Five Points

Part Number: MA4X160A

MFG: Panasonic

Package Cooled: 2008

D/C: SOT-143

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MA4X160A Maximum Ratings

Parameter		Symbol	Rating	Unit
Reverse voltage (DC)		V_R	80	V
Repetitive peak reverse voltage		V_RM	80	V
Reverse voltage (DC)	Single	I_F	100	mA
	Double		70
Repetitive peak forward current	Single	I_FM	225	mA
	Double		170
Non-repetitive pea forward surge current*	Single	I_FSM	500	mA
	Double		375
Junction temperature		Tj	150	°C
Storage temperature		Tstg	−55 to +150	°C

Note) * : t = 1 s

MA4X160A Features

• Two isolated elements contained in one package, allowing highdensity mounting
• Centrosymmetrical wiring, allowing to free from the taping direction
• Short reverse recovery time t_rr
• Small terminal capacitance, C_t

MA4X160A Connection Diagram

MA4X713 Maximum Ratings

Parameter		Symbol	Rating	Unit
Reverse voltage (DC)		VR	30	V
Peak forward current Forward current (DC)	Single Double* Single Double*	IFM IF	150 110 30 20	mA mA
Junction temperature Storage temperature		Tj Tstg	125 −55 to +125	°C °C

Note) *: Value per chip

MA4X713 Features

• Two isolated elements are contained in one package, allowing high-density mounting
• Two MA3X704A (MA704A) is contained in one package (of a type in the same direction)
• Low forward voltage VF , optimum for low voltage rectification
• Optimum for high frequency rectification because of its short reverse recovery time (trr)
• Mini type 4-pin package

MA4X714 Maximum Ratings

Parameter		Symbol	Rating	Unit
Reverse voltage (DC)		VR	30	V
Peak forward current Forward current (DC)	Single Double* Single Double*	IFM IF	150 110 30 20	mA mA
Junction temperature Storage temperature		Tj Tstg	125 −55 to +125	°C °C

Note) * : Value per chip

MA4X714 Features

• Two MA3X704As are contained in one package (Two diodes in a different direction)
• Optimum for low-voltage rectification because of its low forward rise voltage (VF)
• Optimum for high-frequency rectification because of its short reverse recovery time (trr)

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