MFG:Panasonic - SSG Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
MA4SD1000L, MA4SPS302, MA4SPS402 Datasheet download
Category: Discrete Semiconductor Products
MFG: Panasonic - SSG
Package Cooled: N/A
D/C: 09+
Description: DIODE SCHOTTKY 20V 200MA SSMINI4
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PDF/DataSheet Download
Datasheet: MA4000
File Size: 73791 KB
Manufacturer: PANASONIC [Panasonic Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MA4SPS302
File Size: 417586 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MA4SPS402
File Size: 51353 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
| Technical/Catalog Information | MA4SD1000L |
| Vendor | Panasonic - SSG |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Diode Configuration | 2 Independent |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) (per Diode) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 470mV @ 200mA |
| Current - Reverse Leakage @ Vr | 20A @ 10V |
| Reverse Recovery Time (trr) | 3ns |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Surface Mount |
| Package / Case | SS Mini 4P |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MA4SD1000L MA4SD1000L MA4SD1000LTR ND MA4SD1000LTRND MA4SD1000LTR |
M/A-COM's MA4SPS302 is a silicon-glass PIN diode fabricated with M/A-COM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal side walls conductive. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.
| Parameter | Absolute Maximum |
| Reverse Voltage Forward Current Operating Temperature Storage Temperature Mounting Temperature |
-70 V 100 mA -65°C to +150°C -65°C to +150°C +235°C for 10 seconds |
These devices can be used in series and shunt switches for wireless circuits where smaller area and profile are required. Low parasitic values of L and C make additional circuit tuning unnecessary. 2 RS value @ 1 mA makes the devices suitable for smaller current consumption applications. W
M/A-COM's MA4SPS402 is a silicon-glass PIN diode fabricated with M/A-COM's patented HMIC™ process. This device features two silicon pedestals embedded in a low loss glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal side walls conductive. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly.
| Parameter | Absolute Maximum |
| Reverse Voltage Forward Current Operating Temperature Storage Temperature Mounting Temperature |
-70 V 100 mA -65°C to +150°C -65°C to +150°C +235°C for 10 seconds |
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