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M58LW032D-90ZA6, M58LW032D90ZA6S, M58LW064A

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Info of M58LW032D-90ZA6
Info of M58LW032D90ZA6S
Info of M58LW064A

M58LW032D-90ZA6, M58LW032D90ZA6S, M58LW064A Selling Leads, Datasheet

MFG:ST Package Cooled:BGA D/C:09+

M58LW032D-90ZA6, M58LW032D90ZA6S, M58LW064A Picture

M58LW032D-90ZA6, M58LW032D90ZA6S, M58LW064A Datasheet download

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Part Number: M58LW032D-90ZA6

MFG: ST

Package Cooled: BGA

D/C: 09+

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M58LW064A General Description

The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 m Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organised as 4M by 16 bit. The M58LW064B has 4M by 16m bit or 2M by 32 bit organisation selectable by the Word Organisation WORD input. Both devices are internally configured as 64 blocks of 1 Mbit each.

The devices support Asynchronous Random and Latch Enable Controlled Read with Page mode as well as Synchronous Burst Read with a configurablem burst. They also support pipelined synchronous Burst Read. Writing is Asynchronous or Asynchronous Latch Enable Controlled.

The configurable synchronous burst read interface allows a high data transfer rate controlled by the Burst Clock K signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length are configurable and can be easily adapted to a large variety of system clock frequencies and microprocessors. A 16 Word or 8 Double- Word Write Buffer improves effective programming speed by up to 20 times when data is programmed in full buffer increments. Effective Word programming takes typically 12ms. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks.

Program and Erase operations can be suspended in order to perform either Read or Program in any other block and then resumed. All blocks are protected against spurious programming and erase cycles at power-up. Any block can be separately protected at any time. The block protection bits can also be deleted, this is executed as one sequence for all blocks simultaneously. Block protection can be temporarily disabled. Each block can be programmed and erased over 100,000 cycles. Block erase is performed in typically 1 second.

An internal Command Interface (C.I.) decodes Instructions to access/modify the memory content. The Program/Erase Controller (P/E.C.) automatically executes the algorithms taking care of the timings required by the program and erase operations. Verification is internally performed and a Status Register tracks the status of the operations. The Ready/Busy output RB indicates the completion of operations.

Instructions are written to the memory through the Command Interface (C.I.) using standard microprocessor write timings. The device supports the Common Flash Interface (CFI) command set definition.

A Reset/Power-down mode is entered when the RP input is Low. In this mode the power consumption is lower than in the normal standby mode, the device is write protected and both the Status and the Burst Configuration Registers are cleared. A recovery time is required when the RP input goes High.

The device is offered in various package versions, TSOP56 (14 x 20 mm), TSOP86 Type II (11.76 x 22.22 mm) and LBGA54 1mm ball pitch for the M58LW064A and PQFP80 for the M58LW064B.

M58LW064A Maximum Ratings

Symbol	Parameter		Value	Unit
T_A	Ambient Operating Temperature	Grade 1	0 to 70	°C
T_A	Ambient Operating Temperature	Grade 6	40 to 85
T_BIAS	Temperature Under Bias		40 to 125	°C
T_STG	Storage Temperature		55 to 150	°C
V_IO	Input or Output Voltage		0.6 to V_DDQ +0.6	V
V_DD, V_DDQ	Supply Voltage		0.6 to 5.0	V
V_HH	RP Hardware Block Unlock Voltage		0.6 to 10⁽²⁾	V

M58LW064A Connection Diagram

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