M58LW032C, M58LW032C 110N1, M58LW032C-110N6 Selling Leads, Datasheet
MFG:ST Package Cooled:TSOP56 D/C:04+
M58LW032C, M58LW032C 110N1, M58LW032C-110N6 Datasheet download
Part Number: M58LW032C
MFG: ST
Package Cooled: TSOP56
D/C: 04+
M58LW032C, M58LW032C 110N1, M58LW032C-110N6
- Table of contents:
Info of M58LW032C
Info of M58LW032C 110N1
Info of M58LW032C-110N6
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About M58LW032C
PDF/DataSheet Download
Datasheet: M58LW032C
File Size: 865981 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About M581
PDF/DataSheet Download
Datasheet: M581
File Size: 112333 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About M581
PDF/DataSheet Download
Datasheet: M581
File Size: 112333 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
M58LW032C General Description
Stressing the device above the ratings listed in Table 1, Absolute Maximum Ratings, may cause ermanent damage to the device. These are tress ratings only and operation of the device at hese or any other conditions above those indicated n the Operating sections of this specification isnot implied. Exposure to Absolute Maximum Rating onditions for extended periods may affect device eliability. Refer also to the TMicroelectronics SURE Program and other relevant uality documents.
M58LW032C Maximum Ratings
|
Symbol |
Parameter |
Value
|
Unit | |
|
Min |
Max | |||
|
TBIAS |
Temperature Under Bias |
40 |
125 |
°C |
|
TSTG |
Storage Temperature |
55 |
150 |
°C |
|
VIO |
Input or Output Voltage |
0.6 |
VDDQ +0.6 |
V |
|
VDD, VDDQ |
Supply Voltage |
0.6 |
5.0 |
V |
M58LW032C Features
` WIDE x16 DATA BUS for HIGH BANDWIDTH
` SUPPLY VOLTAGE
VDD = 2.7 to 3.6V core supply voltage for Program, rase and Read operations
VDDQ = 1.8 to VDD for I/O Buffers
` SYNCHRONOUS/ASYNCHRONOUS READ
Synchronous Burst read
Asynchronous Random Read
Asynchronous Address Latch Controlled ead
Page Read
` ACCESS TIME
Synchronous Burst Read up to 56MHz
Asynchronous Page Mode Read 90/25ns, 10/25ns
Random Read 90ns, 110ns
` PROGRAMMING TIME
16 Word Write Buffer
12s Word effective programming time
` 32 UNIFORM 64 KWord MEMORY BLOCKS
` ENHANCED SECURITY
Block Protection/ Unprotection
Smart Protection: irreversible block locking ystem
VPEN signal for Program Erase Enable
128 bit Protection Register with 64 bit Unique ode in OTP area
` PROGRAM and ERASE SUSPEND
` COMMON FLASH INTERFACE
` 100,000 PROGRAM/ERASE CYCLES per LOCK
` ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code M58LW032C : 8822h
` SUPPLY VOLTAGE
VDD = 2.7 to 3.6V core supply voltage for Program, rase and Read operations
VDDQ = 1.8 to VDD for I/O Buffers
` SYNCHRONOUS/ASYNCHRONOUS READ
Synchronous Burst read
Asynchronous Random Read
Asynchronous Address Latch Controlled ead
Page Read
` ACCESS TIME
Synchronous Burst Read up to 56MHz
Asynchronous Page Mode Read 90/25ns, 10/25ns
Random Read 90ns, 110ns
` PROGRAMMING TIME
16 Word Write Buffer
12s Word effective programming time
` 32 UNIFORM 64 KWord MEMORY BLOCKS
` ENHANCED SECURITY
Block Protection/ Unprotection
Smart Protection: irreversible block locking ystem
VPEN signal for Program Erase Enable
128 bit Protection Register with 64 bit Unique ode in OTP area
` PROGRAM and ERASE SUSPEND
` COMMON FLASH INTERFACE
` 100,000 PROGRAM/ERASE CYCLES per LOCK
` ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code M58LW032C : 8822h
M58LW032C Connection Diagram
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