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Note : 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
M393T6553CZA-CE7 Features
• Performance range • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Read Latency(RL) -1 • Burst Length: 4 , 8(Interleave/nibble sequential) • Programmable Sequential / Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) • Off-Chip Driver(OCD) Impedance Adjustment • On Die Termination with selectable values(50/75/150 ohms or disable) • PASR(Partial Array Self Refresh) • Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE 95 °C - support High Temperature Self-Refresh rate enable feature • Serial presence detect with EEPROM • DDR2 SDRAM Package: 60ball FBGA - 128Mx4/64Mx8 • All of Lead-free products are compliant for RoHS
M39432 General Description
The M39432 is a single supply voltage memory device combining Flash memory and EEPROM on a single chip. The memory is mapped in two. The M39432 EEPROM block may be written bytewise or by a page at a time (up to 64 bytes). The integrity of the data can be secured with the help of the Software Data Protection (SDP).
The M39432 Flash Memory block offers 8 sectors, each one 64 KByte in size. Each sector may be erased individually, and programmed a byte at a time. Each sector can be separately protected and unprotected against Program and Erase. Sector erasure may be suspended, while data is read from other sectors of the Flash memory block (or from the EEPROM block), and then resumed. The Flash memory block is functionally compatible with the M29W040 (4 Mbit Single Voltage Flash Memory).
During a Program or Erase cycle in the Flash memory or during a Write cycle in the EEPROM, the status of the M39432 internal logic can be read on the Data Output pins DQ7, DQ6, DQ5 and DQ3.
M39432 Maximum Ratings
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
40 to 85
TBIAS1
Temperature Under Bias
50 to 125
TSTG1
Storage temperature
65 to 150
VIO1,2
Input or Output Voltages(except A9)
0.6 to 7
V
VCC1
Supply Voltage
0.6 to 7
V
VA9, VG, VEF 1,2
A9, G, EF Voltage
0.6 to 13.5
V
Note: 1. Stresses above those listed may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Please see the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum voltage may undershoot to 2 V, during transition and for less than 20 ns.
M39432 Features
` Multiple Memories on a Single Chip: 4 Mbit Flash Memory (organised as 8 sectors) 256 Kbit EEPROM 64 Byte One Time Programmable Memory ` CONCURRENT Mode (Read Flash while writing to EEPROM) ` WRITE, PROGRAM and ERASE Status Bits ` 2.7V to 3.6V Single Supply Voltage for PROGRAM, ERASE and READ Operations ` 100 ns Access Time (Flash and EEPROM blocks) ` Low Power Consumption 60 mA Stand-by mode (maximum) Deep Power Down mode: ` mA (maximum), 200 nA (typical) ` Standard Flash Memory Package ` 100,000 Erase/Write Cycles (minimum) ` 10 Year Data Retention (minimum)