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Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 and f50 Hz
I0
1501)
mA
Surge Forward Current at t < 1 s and Tj = 25
IFSM
500
mA
Power Dissipation at Tamb = 25
Ptot
5001)
mW
Junction Temperature
Tj
175
Storage Temperature Range
Ts
-65 to +175
1)Valid provided that electrodes are kept at ambient temperature.
LL4448 Features
·Silicon Epitaxial Planar Diode ·Fast switching diode in MiniMELF case especially suited for automatic insertion. ·This diode is also available in other case styles including: the DO-35 case with the type designation 1N4448, the SOD-123 case with the type designation 1N4448W, and the SOT-23 case with the type designation IMBD4448.