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This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.
KM416V4000B Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +6.5
V
Voltage on VCC supply relative to VSS
TVCC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
KM416V4000B Features
• Part Identification - KM416V4000B/B-L(3.3V, 8K Ref.) - KM416V4100B/B-L(3.3V, 4K Ref.) • Fast Page Mode operation • 2CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • LVTTL(3.3V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic TSOP(II) packages • +3.3V±0.3V power supply