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KM416V1000AT-L8, KM416V1000B, KM416V1000BFL6

KM416V1000AT-L8, KM416V1000B, KM416V1000BFL6 Selling Leads, Datasheet

MFG:SAMSUNG  Package Cooled:TSOP-50  D/C:2005+

KM416V1000AT-L8, KM416V1000B, KM416V1000BFL6 Picture

KM416V1000AT-L8, KM416V1000B, KM416V1000BFL6 Datasheet download

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Part Number: KM416V1000AT-L8

 

MFG: SAMSUNG

Package Cooled: TSOP-50

D/C: 2005+

 

 

 
 
 
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  • KM400ACD

  • Vendor: VIA D/C: 03+& Qty: 20 Note: 83018074  Adddate: 2024-11-24
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  • Bells electronics Co.,Ltd   China
    Contact: Mr.Bill   MSN:chen.ok@hotmail.com
    Tel: 86-0755-83018074
    Fax: 86-0755-83018777
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  • KM4100

  • D/C: 01+& Qty: 43  Adddate: 2024-11-24
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  • Moko Technology Limited   China
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    Fax: 0086-0755-23956710
    (22)

About KM4100

PDF/DataSheet Download

Datasheet: KM4100

File Size: 341939 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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KM416V1000B Suppliers

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About KM416V1000B

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Datasheet: KM416V1000B

File Size: 90096 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

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KM416V1000BFL6 Suppliers

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  • KM400ACD

  • Vendor: VIA D/C: 03+& Qty: 20 Note: 83018074  Adddate: 2024-11-24
  • Inquire Now
  • Bells electronics Co.,Ltd   China
    Contact: Mr.Bill   MSN:chen.ok@hotmail.com
    Tel: 86-0755-83018074
    Fax: 86-0755-83018777
    (0)
  • KM4100

  • D/C: 01+& Qty: 43  Adddate: 2024-11-24
  • Inquire Now
  • Moko Technology Limited   China
    Contact: Mr.Tom   MSN:tom-ic@hotmail.com
    Tel: 0086-0755-23956700
    Fax: 0086-0755-23956710
    (22)

About KM4100

PDF/DataSheet Download

Datasheet: KM4100

File Size: 341939 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

Related PDF Download

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KM416V1000B General Description

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore- RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

KM416V1000B Maximum Ratings

Parameter Symbol Rating 3.3V Rating5V Unit
Voltage on any pin relative to VSS VIN, VOUT -0.5 to +4.6 -1.0 to +7.0 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 -1.0 to +7.0 V
Storage temperature TSTG -55 to +150 -55 ~ +150 °C
Power dissipation PD 1.0 1.0 W
Short circuit current IOS 50 50 mA

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

KM416V1000B Features

· Part Identification
- KM416C1000B/B-L (5V, 4K Ref.)
- KM416C1200B/B-L (5V, 1K Ref.)
- KM416V1000B/B-L (3.3V, 4K Ref.)
- KM416V1200B/B-L (3.3V, 1K Ref.)
· Fast Page Mode operation
· 2 CAS Byte/Word Read/Write operation
· CAS-before-RAS refresh capability
· RAS-only and Hidden refresh capability
· Self-refresh capability (L-ver only)
· TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
· Early Write or output enable controlled write
· JEDEC Standard pinout
· Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages
· Single +5V¡¾10% power supply (5V product)
· Single +3.3V¡¾0.3V power supply (3.3V product)

KM416V1000B Connection Diagram

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