Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Voltage applied to any RSL or CMOS pin with respect to Gnd
- 0.3
VDD+0.3
V
VDD,ABS, VDDA,ABS
Voltage on VDD and VDDA with respect to Gnd
- 0.5
VDD+1.0
V
TSTORE
Storage temperature
- 50
100
°C
KM416RD8AS Features
Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and column control buses for easy scheduling and highest performance - 32 banks: four transactions can take place simultaneously at full bandwidth data rates Low latency features - Write buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - Interleaved transactions Advanced power management: - Multiple low power states allows flexibility in powerconsumption versus time to transition to active state - Power-down self-refresh Organization: 1Kbyte pages and 32 banks, x 16 Uses Rambus Signaling Level (RSL) for up to 800MHz operation