MFG:Fairchild Optoelectronics Group Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+/09+
ISL9K1560G3, ISL9K18120G3, ISL9K30120G3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Optoelectronics Group
Package Cooled: TO-247
D/C: 08+/09+
Description: DIODE DUAL 1200V 18A TO-247
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PDF/DataSheet Download
Datasheet: ISL9K1560G3
File Size: 150412 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ISL9K18120G3
File Size: 151219 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ISL9K30120G3
File Size: 149181 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | ISL9K1560G3 |
| Vendor | Fairchild Optoelectronics Group |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) (per Diode) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 2.2V @ 15A |
| Current - Reverse Leakage @ Vr | 100A @ 600V |
| Reverse Recovery Time (trr) | 40ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-247 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ISL9K1560G3 ISL9K1560G3 |
The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design atlower cost.
Formerly developmental type TA49410.
| Symbol | Parameter | Ratings | Units |
| VRRM | Repetitive Reverse Voltage | 600 | V |
| VRWM | Working Peak Reverse Voltage | 600 | V |
| VR | DC Blocking Voltage | 600 | V |
| IF(AV) | Average Rectified Forward Current (TC = 145oC) Total Device Current (Both Legs) |
15 30 |
A A |
| IFRM | Repetitive Peak Surge Current (20kHz Square Wave) | 30 | A |
| IFSM | Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) | 200 | A |
| PD | Power Dissipation | 150 | W |
| EAVL | Avalanche Energy (1A, 40mH) | 20 | mJ |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to 175 | °C |
| TL TPKG |
Maximum Temperature for Soldering |
300 260 |
°C °C |
| Technical/Catalog Information | ISL9K18120G3 |
| Vendor | Fairchild Optoelectronics Group |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
| Current - Average Rectified (Io) (per Diode) | 18A |
| Voltage - Forward (Vf) (Max) @ If | 3.3V @ 18A |
| Current - Reverse Leakage @ Vr | 100A @ 1200V |
| Reverse Recovery Time (trr) | 70ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-247 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ISL9K18120G3 ISL9K18120G3 |
The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49414.
| Symbol | Parameter | Ratings | Units |
| VRRM | Repetitive Reverse Voltage | 1200 | V |
| VRWM | Working Peak Reverse Voltage | 1200 | V |
| VR | DC Blocking Voltage | 1200 | V |
| IF(AV) | Average Rectified Forward Current (TC = 92oC) Total Device Current (Both Legs) |
18 36 |
A A |
| IFRM | Repetitive Peak Surge Current (20kHz Square Wave) | 36 | A |
| IFSM | Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) | 200 | A |
| PD | Power Dissipation | 36 | W |
| EAVL | Avalanche Energy (1A, 40mH) | 20 | mJ |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to 150 | °C |
| TL TPKG |
Maximum Temperature for Soldering |
300 260 |
°C °C |
Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49415.
| Symbol | Parameter | Ratings | Units |
| VRRM | Repetitive Reverse Voltage | 1200 | V |
| VRWM | Working Peak Reverse Voltage | 1200 | V |
| VR | DC Blocking Voltage | 1200 | V |
| IF(AV) | Average Rectified Forward Current (TC = 80oC) Total Device Current (Both Legs) |
30 60 |
A A |
| IFRM | Repetitive Peak Surge Current (20kHz Square Wave) | 70 | A |
| IFSM | Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) | 325 | A |
| PD | Power Dissipation | 166 | W |
| EAVL | Avalanche Energy (1A, 40mH) | 20 | mJ |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to 150 | °C |
| TL TPKG |
Maximum Temperature for Soldering |
300 260 |
°C °C |
Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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