HMC-ALH435, HMC-ALH444, HMC-ALH445 Selling Leads, Datasheet
MFG:HITTITE Package Cooled:N/A D/C:2010+
HMC-ALH435, HMC-ALH444, HMC-ALH445 Datasheet download
Part Number: HMC-ALH435
MFG: HITTITE
Package Cooled: N/A
D/C: 2010+
HMC-ALH435, HMC-ALH444, HMC-ALH445
- Table of contents:
Info of HMC-ALH435
Info of HMC-ALH444
Info of HMC-ALH445
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
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About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
About HMC1001
PDF/DataSheet Download
Datasheet: HMC1001
File Size: 236544 KB
Manufacturer:
Download : Click here to Download
HMC-ALH435 General Description
The HMC-ALH435 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 5 and 20 GHz. The amplifier provides 13 dB of gain, 2.2 dB noise figure at 12 GHz and +16 dBm of output power at 1 dB gain compression while requiring only 30 mA from a +5V supply voltage. The HMC-ALH435 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.
HMC-ALH444 General Description
The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifi er die which operates between 1 and 12 GHz. The amplifi er provides 17 dB of gain, 1.5 dB noise fi gure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.
HMC-ALH444 Maximum Ratings
| Drain Bias Voltage | +5.5 Vdc |
| RF Input Power | 12 dBm |
| Gate Bias Voltage Vgg1 | -1 to 0.3 Vdc |
| Gate Bias Voltage Vgg2 | 0 to 2.5 Vdc |
| Channel Temperature | 180 |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 |
HMC-ALH444 Features
·Noise Figure: 1.75 dB @ 10 GHz
·Gain: 17 dB
·P1dB Output Power: +19 dBm @ 5 GHz
·Supply Voltage: +5V @ 55 mA
·Die Size: 2.64 x 1.64 x 0.1 mm
·Gain: 17 dB
·P1dB Output Power: +19 dBm @ 5 GHz
·Supply Voltage: +5V @ 55 mA
·Die Size: 2.64 x 1.64 x 0.1 mm
HMC-ALH444 Typical Application
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
* VSAT
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
* VSAT
HMC-ALH445 General Description
The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplii er die which operates between 18 and 40 GHz. The amplii er provides 9 dB of gain, 3.9 dB noise i gure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a single +5V supply. The HMC-ALH445 amplii er is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.
HMC-ALH445 Maximum Ratings
| Drain Bias Voltage Drain Bias Current RF Input Power Channel Temperature Storage Temperature Operating Temperature |
+5.5 Vdc 60 mA 10 dBm 180 -65 to +150 -55 to +85 |
HMC-ALH445 Features
·Noise Figure: 3.9 dB @ 28 GHz
·Gain: 9 dB
·P1dB Output Power: +12 dBm @ 28 GHz
·Supply Voltage: +5V @ 45 mA
·Die Size: 1.6 × 1.6 × 0.1 mm
·Gain: 9 dB
·P1dB Output Power: +12 dBm @ 28 GHz
·Supply Voltage: +5V @ 45 mA
·Die Size: 1.6 × 1.6 × 0.1 mm
HMC-ALH445 Typical Application
· Wideband Communication Systems
· Point-to-Point Radios
· Point-to-Multi-Point Radios
· Military & Space
· Test Instrumentation
· Point-to-Point Radios
· Point-to-Multi-Point Radios
· Military & Space
· Test Instrumentation
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