HERAF802G, HERAF803G, HERAF804G Selling Leads, Datasheet
MFG:TAIWAN Package Cooled:TO-220AC D/C:08+
HERAF802G, HERAF803G, HERAF804G Datasheet download
Part Number: HERAF802G
MFG: TAIWAN
Package Cooled: TO-220AC
D/C: 08+
HERAF802G, HERAF803G, HERAF804G
- Table of contents:
Info of HERAF802G
Info of HERAF803G
Info of HERAF804G
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About HERAF802G
PDF/DataSheet Download
Datasheet: HERAF802G
File Size: 68735 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
About HERAF803G
PDF/DataSheet Download
Datasheet: HERAF803G
File Size: 68735 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
About HERAF804G
PDF/DataSheet Download
Datasheet: HERAF804G
File Size: 68735 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
HERAF802G Maximum Ratings
|
Parameter |
SYMBOL |
HERAF 801G |
HERAF 802G |
HERAF 803G |
HERAF 804G |
HERAF 805G |
HERAF 806G |
HERAF 807G |
HERAF 808G |
UNIT |
|
Maximum Recurrent Peak Reverse Voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
V |
|
Maximum RMS Voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
V |
| Maximum DC blking voltage |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
V |
|
Maximum average forward rectifiedCurrent .375" (9.5mm) lead length@TA =55 |
I(AV) |
8 |
A | |||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM |
15 |
Amps | |||||||
|
Maximum Instantaneous Forward Voltage@ 2.0A |
VF |
1.0 |
1.3 |
1.7 |
V | |||||
| Maximum DC Reverse Current @TA=25 at Rated DC Blking Voltage @ TA=125 |
IR |
10 140 |
A | |||||||
| Maximum reverse recovery time (Note 1) |
Trr |
50 |
80 |
nS | ||||||
| Typical Thermal resistance (Note) |
Cj |
80 |
60 |
pF | ||||||
| Typical Thermal Resistance (Note 3) |
RJC |
2.0 |
/W | |||||||
|
Operating Temperature Range |
TJ |
-65 to +150 |
| |||||||
|
Storage Temperature Range |
TSTG |
-65 to +150 |
||||||||
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
HERAF802G Features
· Glass passivated chip junction.
· High efficiency, Low VF
· High current capability
· High reliability
· High surge current capability
· For use in low voltage, high frequency inventor
· High efficiency, Low VF
· High current capability
· High reliability
· High surge current capability
· For use in low voltage, high frequency inventor
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