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HERAF1001G, HERAF1002G, HERAF1004G

Table of contents:
Info of HERAF1001G
Info of HERAF1002G
Info of HERAF1004G

HERAF1001G, HERAF1002G, HERAF1004G Selling Leads, Datasheet

MFG:TAIWAN Package Cooled:TO-220AC D/C:08+

HERAF1001G, HERAF1002G, HERAF1004G Picture

HERAF1001G, HERAF1002G, HERAF1004G Datasheet download

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Part Number: HERAF1001G

MFG: TAIWAN

Package Cooled: TO-220AC

D/C: 08+

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HERAF1001G Maximum Ratings

Parameter	SYMBOL	HERAF 1001G	HERAF 1002G	HERAF 1003G	HERAF 1004G	HERAF 1005G	HERAF 1006G	HERAF 1007G	HERAF 1008G	UNIT
Maximum Recurrent Peak Reverse Voltage	V_RRM	50	100	200	300	400	600	800	1000	V
Maximum RMS Voltage	V_RMS	35	70	140	210	280	420	560	700	V
Maximum DC blocking voltage	V_DC	50	100	200	300	400	600	800	1000	V
Maximum average forward rectifiedCurrent .375" (9.5mm) lead length@TA =55	I_(AV)	10								A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )	IF_SM	150								A
Maximum Instantaneous Forward Voltage@ 2.0A	V_F	1.0			1.3		1.7			V
Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC	I_R	10 140								A
Maximum reverse recovery time (Note 1)	T_rr	50					80			nS
Typical Thermal resistance (Note)	C_j	80					60			pF
Typical Thermal Resistance (Note 3)	R_JC	2.0								/W
Operating Temperature Range	T_J	-55 to +150
Storage Temperature Range	T_STG	-55 to +150

Notes:
1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.

HERAF1001G Features

·Glass passivated chip junction.
·High efficiency, Low VF
·High current capability
·High reliability
·High surge current capability
·For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.

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