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The HD1760JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Structure 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
HD1760JL Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VBE = 0)
1700
V
VCEO
Collector-emitter voltage (IB = 0)
800
V
VEBO
Emitte-base voltage (IC = 0)
10
V
IC
Collector current
36
A
ICM
Collector peak current (tP < 5ms)
54
A
IB
Base current
18
A
IBM
Base peak current (tP < 5ms)
27
A
PTOT
Total dissipation at Tc = 25
200
W
TSTG
Storage temperature
-55 to 150
TJ
Max. operating junction temperature
150
HD1760JL Features
State-of-the-art technology: diffused collector "enhanced generation" EHVS1 Wide range of optimum drive conditions Stable performance versus operating temperature variation