MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:06+ D/C:TO-3P
HD1750FX, HD1750FX - 311B599, HD1750JL Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 06+
D/C: TO-3P
Description: TRANS NPN 800V HI DEF/CRT TO-264
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PDF/DataSheet Download
Datasheet: HD1750FX
File Size: 206265 KB
Manufacturer: ST
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HD10
File Size: 95942 KB
Manufacturer: MCC [Micro Commercial Components]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HD1750JL
File Size: 206265 KB
Manufacturer: ST
Download : Click here to Download
| Technical/Catalog Information | HD1750FX |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 800V |
| Current - Collector (Ic) (Max) | 24A |
| Power - Max | 75W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6.5 @ 12A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | ISOWATT218FX |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HD1750FX HD1750FX 497 4646 5 ND 49746465ND 497-4646-5 |
| Technical/Catalog Information | HD1750JL |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 800V |
| Current - Collector (Ic) (Max) | 24A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 2mA |
| Mounting Type | Through Hole |
| Package / Case | TO-264 |
| Packaging | Tube |
| Drawing Number | 497; MTO-264; JL; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HD1750JL HD1750JL |
The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
| SYMBOL | PARAMETER | Value | UNIT |
| VCBO | Collector-base voltage(VBE = 0) | 1700 | V |
| VCEO | Collector-emitter voltage(IB = 0) | 800 | V |
| VEBO | Emitter-base voltage(IC = 0) | 10 | V |
| IC | Collector Current | 24 | A |
| ICM | Collector peak current (tP < 5ms) | 36 | A |
| IB | Base Current | 12 | A |
| IBM | Base peak current (tP < 5ms) | 18 | A |
| PTOT | Total dissipation at Tc = 25 | 200 | W |
| Tj | Junction temperature | 150 | |
| TSTG | Storage temperature | -65 to +150 |
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