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The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and pulse s haping. The detector circuit is optimized for simplicity of operation and utilizes an open collector output for maximum application flexibility.
H11N2-M Maximum Ratings
Parameters
Symbol
Device
Value
Units
TOTAL DEVICE Storage Temperature
TSTG
All
-55 to +150
Operating Temperature
TOPR
All
-40 to +85
Lead Solder Temperature
TSOL
All
260 for 10 sec
Lead Solder Temperature Derate Above 25
PD
All
250
mW
2.94
mW/
EMITTER Continuous Forward Current
IF
All
30
mA
Reverse Voltage
VR
All
6
V
Forward Current - Peak (1 s pulse, 300 pps)
IF(pk)
All
1.0
A
LED Power Dissipation 25 Ambient Derate Linearly From 25
PD
All
120
mW
1.41
mW/
DETECTOR Detector Power Dissipation @ 25 Derate Linearly from 25
PD
All
150
mW
1.76
mW/
V45Allowed Range
VO
All
0 to 16
V
V65Allowed Range
VCC
All
0 to 16
V
I4Output Current
IO
All
50
mA
H11N2-M Features
• High data rate, 5 MHz typical (NRZ) • Free from latch up and oscilliation throughout voltage and temperature ranges. • Microprocessor compatible drive • Logic compatible output sinks 16 mA at 0.5 V maximum • Guaranteed on/off threshold hysteresis • Wide supply voltage capability, compatible with all popular logic systems • High common mode transient immunity, 2000 V/s minimum • Fast switching tr= 7.5ns typical, tf= 12ns typical • Underwriter Laboratory (UL) recognized-file #E90700 • VDE recognized File#102497 Add option V (e.g., H11N1VM)
H11N2-M Typical Application
• Logic to logic isolator • Programmable current level sensor • Line receiver-eliminate noise and transient problems • A.C. to TTL conversion-square wave shaping • Interfaces computers with peripherals • Isolated power MOS driver for power supplies