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H11F13SD, H11F1M, H11F1-S

H11F13SD, H11F1M, H11F1-S Selling Leads, Datasheet

MFG:Fairchild Optoelectronics Group  Category:Isolators  Package Cooled:DIP-6  D/C:07+

H11F1M Picture

H11F13SD, H11F1M, H11F1-S Datasheet download

Five Points

Part Number: H11F1M

Category: Isolators

MFG: Fairchild Optoelectronics Group

Package Cooled: DIP-6

D/C: 07+

Description: OPTOCOUPLER PHOTO FET 6DIP

 

 
 
 
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  • H1100IB

  • Vendor: Harris Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-11-27
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  • shenzhengzhenghuaCompany   China
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  • H1100IB

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  • AMASS ELETRONICS LIMITED   China
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About H1102

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Datasheet: H1102

File Size: 107396 KB

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H11F1M Suppliers

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  • H1100IB

  • Vendor: Harris Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-11-27
  • Inquire Now
  • shenzhengzhenghuaCompany   China
    Contact: Ms.xupolly   MSN:zhic88@hotmail.com
    Tel: 86-0755-83035906/83035909
    Fax: --
    (0)
  • H1100IB

  • Vendor: Hirect Pack: SOP Qty: 600 Note: original,in stock"  Adddate: 2024-11-27
  • Inquire Now
  • AMASS ELETRONICS LIMITED   China
    Contact: Ms.tinahou   MSN:tinaaec@hotmail.com
    Tel: 86-755-82265120
    Fax: 86-755-82265220
    (0)

About H1102

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Datasheet: H1102

File Size: 107396 KB

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H11F1-S Suppliers

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  • H1100IB

  • Vendor: Harris Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-11-27
  • Inquire Now
  • shenzhengzhenghuaCompany   China
    Contact: Ms.xupolly   MSN:zhic88@hotmail.com
    Tel: 86-0755-83035906/83035909
    Fax: --
    (0)
  • H1100IB

  • Vendor: Hirect Pack: SOP Qty: 600 Note: original,in stock"  Adddate: 2024-11-27
  • Inquire Now
  • AMASS ELETRONICS LIMITED   China
    Contact: Ms.tinahou   MSN:tinaaec@hotmail.com
    Tel: 86-755-82265120
    Fax: 86-755-82265220
    (0)

About H1102

PDF/DataSheet Download

Datasheet: H1102

File Size: 107396 KB

Manufacturer:

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H11F1M Parameters

Technical/Catalog InformationH11F1M
VendorFairchild Optoelectronics Group
CategoryIsolators
Voltage - Isolation5300Vrms
Input TypeDC
Output TypeTransistor
Current - Output / Channel100mA
Voltage - Output30V
Vce Saturation (Max)-
Current Transfer Ratio (Min)-
Mounting TypeThrough Hole
Package / Case6-DIP
PackagingTube
Number of Circuits1 - Single
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names H11F1M
H11F1M

H11F1M General Description

The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

H11F1M Maximum Ratings

Symbol
Parameter
Device
Value
Units
TSTG
TOPR
TSOL
Storage Temperature
Operating Temperature
Lead Solder Temperature
All
All
All
-55 to +150
-40 to +100
260 for 10 sec


IF
VR
IF(pk)
Continuous Forward Current
Reverse Voltage
Forward Current-Peak(10s pulse,1%duty cycle)
All
All
All
60
5
l
mA
V
A
PD
LED Power Dissipation 25 Ambient
Derate Linearly from 25
All
100
mW
1.33
mW/
PD
Detector Power Dissipation @ 25
All
300
mW
Derate linearly from 25
4.0
mW/
BV4-6
Breakdown Voltage (either polarity)
H11F1M
H11F2M
±30
V
H11F3M
±15
V
I4-6
Continuous Detector Current (either polarity)
All
±100
A

H11F1M Features

`100 to 300M
`99.9% linearity
`15pF shunt capacitance
`100G I/O isolation resistance
`Extremely low offset voltage
`60 Vpk-pk signal capability
`No charge injection or latch-up
`ton, toff15s
`UL recognized (File #E90700)

H11F1M Typical Application

·Isolated variable attenuator
·Automatic gain control
·Active filter fine tuning/band switching
·Isolated sample and hold circuit
·Multiplexed, optically isolated A/D conversion

H11F1M Connection Diagram

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