Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
H11F1M Maximum Ratings
Symbol
Parameter
Device
Value
Units
TSTG TOPR TSOL
Storage Temperature Operating Temperature Lead Solder Temperature
All All All
-55 to +150 -40 to +100 260 for 10 sec
IF VR IF(pk)
Continuous Forward Current Reverse Voltage Forward Current-Peak(10s pulse,1%duty cycle)
All All All
60 5 l
mA V A
PD
LED Power Dissipation 25 Ambient Derate Linearly from 25
All
100
mW
1.33
mW/
PD
Detector Power Dissipation @ 25
All
300
mW
Derate linearly from 25
4.0
mW/
BV4-6
Breakdown Voltage (either polarity)
H11F1M H11F2M
±30
V
H11F3M
±15
V
I4-6
Continuous Detector Current (either polarity)
All
±100
A
H11F1M Features
`100 to 300M `99.9% linearity `15pF shunt capacitance `100G I/O isolation resistance `Extremely low offset voltage `60 Vpk-pk signal capability `No charge injection or latch-up `ton, toff15s `UL recognized (File #E90700)
H11F1M Typical Application
·Isolated variable attenuator ·Automatic gain control ·Active filter fine tuning/band switching ·Isolated sample and hold circuit ·Multiplexed, optically isolated A/D conversion