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The H11DXM, 4N38M and MOC8204M are phototransistor- type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D3M Maximum Ratings
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
All
-55 to +150
TOPR
Operating Temperature
All
-40 to +100
TSOL
Lead Solder Temperature (Wave Solder)
All
260 for 10 sec
PD
Total Device Power Dissipation @ TA= 25 Derate Above 25
All
260
mW
3.5
mW/
EMITTER
IF
Forward DC Current(1)
All
80
mA
VR
Reverse Input Voltage(1)
All
6.0
V
IF(pk)
Forward Current Peak (1s pulse, 300pps)(1)
All
3.0
A
PD
LED Power Dissipation @ TA= 25(1) Derate Above 25
All
150
mW
1.41
mW/
DETECTOR
PD
Power Dissipation @ TA= 25 Derate linearly above 25
All
300
mW
4.0
mW/
VCER
Collector to Emitter Voltage(1)
MOC8204M
400
V
H11D1M, H11D2M
300
H11D3M
200
4N38M
80
VCBO
Collector Base Voltage(1)
MOC8204M
400
V
H11D1M, H11D2M
300
H11D3M
200
4N38M
80
VECO
Emitter to Collector Voltage(1)
H11D1M, H11D2M, H11D3M, MOC8204M
7
V
IC
Collector Current (Continuous)
All
100
mA
Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only).