GMS81C2112, GMS81C2120, GMS81C2120-HJ012 Selling Leads, Datasheet
MFG:N/A Package Cooled:N/A D/C:09+
GMS81C2112, GMS81C2120, GMS81C2120-HJ012 Datasheet download
Part Number: GMS81C2112
MFG: N/A
Package Cooled: N/A
D/C: 09+
GMS81C2112, GMS81C2120, GMS81C2120-HJ012
- Table of contents:
Info of GMS81C2112
Info of GMS81C2120
Info of GMS81C2120-HJ012
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About GMS81C2112
PDF/DataSheet Download
Datasheet: GMS81C2112
File Size: 1849530 KB
Manufacturer: HYNIX [Hynix Semiconductor]
Download : Click here to Download
About GMS81C2120
PDF/DataSheet Download
Datasheet: GMS81C2120
File Size: 1849530 KB
Manufacturer: HYNIX [Hynix Semiconductor]
Download : Click here to Download
About GMS30000EVA
PDF/DataSheet Download
Datasheet: GMS30000EVA
File Size: 444089 KB
Manufacturer: HYNIX [Hynix Semiconductor]
Download : Click here to Download
GMS81C2112 General Description
The GMS81C2112 and GMS81C2120 are advanced CMOS 8-bit microcontroller with 12K/20K bytes of ROM. These are a powerful microcontroller which provides a highly flexible and cost effective solution to many VFD applications. These provide the following standard features: 12K/20K bytes of ROM, 448 bytes of RAM, 8-bit timer/counter, 8-bit A/D converter, 10-bit High Speed PWM Output, Programmable Buzzer Driving Port, 8-bit Basic Interval Timer, 7-bit Watch dog Timer, Serial Peripheral Interface, on-chip oscillator and clock circuitry. They also come with high voltage I/O pins that can directly drive a VFD (Vacuum Fluorescent Display). In addition, the GMS81C2112 and GMS81C2120 support power saving modes to reduce power consumption.
GMS81C2112 Maximum Ratings
Supply voltage ................................................................................................................................................ -0.3 to +7.0 V
Storage Temperature ..................................................................................................................................... -40 to +85 °C
Voltage on Normal voltage pin with respect to Ground (VSS) ......................................................................... -0.3 to VDD+0.3 V
Voltage on High voltage pin with respect to Ground (VSS) ............................................................................. -45V to VDD+0.3 V
Maximum current out of VSSpin ...................................................................................................................... 150 mA
Maximum current into VDDpin ......................................................................................................................... 80 mA
Maximum current sunk by (IOL per I/O Pin) ................................................................................................... 20 mA
Maximum output current sourced by (IOH per I/O Pin) ................................................................................... 8 mA
Maximum current (IOL) ................................................................................................................................ 100 mA
Maximum current (IOH)................................................................................................................................. 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Storage Temperature ..................................................................................................................................... -40 to +85 °C
Voltage on Normal voltage pin with respect to Ground (VSS) ......................................................................... -0.3 to VDD+0.3 V
Voltage on High voltage pin with respect to Ground (VSS) ............................................................................. -45V to VDD+0.3 V
Maximum current out of VSSpin ...................................................................................................................... 150 mA
Maximum current into VDDpin ......................................................................................................................... 80 mA
Maximum current sunk by (IOL per I/O Pin) ................................................................................................... 20 mA
Maximum output current sourced by (IOH per I/O Pin) ................................................................................... 8 mA
Maximum current (IOL) ................................................................................................................................ 100 mA
Maximum current (IOH)................................................................................................................................. 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
GMS81C2112 Features
• 20K/12K bytes ROM(EPROM)
• 448 Bytes of On-Chip Data RAM (Including STACK Area)
• Minimum Instruction Execution time:
- 1uS at 4MHz (2cycle NOP Instruction)
• One 8-bit Basic Interval Timer
• One 7-bit Watch Dog Timer
• Two 8-bit Timer/Counters
• 10-bit High Speed PWM Output
• One 8-bit Serial Peripheral Interface
• Two External Interrupt Ports
• One Programmable 6-bit Buzzer Driving Port
• 38 I/O Lines
- 34 Programmable I/O pins (Included 21 high-voltage pins Max. 40V)
- Three Input Only pins: 1 high-voltage pin
- One Output Only pin
• Eight Interrupt Sources
- Two External Sources (INT0, INT1)
- Two Timer/Counter Sources (Timer0, Timer1)
- Four Functional Sources (SPI,ADC,WDT,BIT)
• 8-Channel 8-bit On-Chip Analog to Digital Converter
• Oscillator:
- Crystal
- Ceramic Resonator
- External R Oscillator
• Low Power Dissipation Modes
- STOP mode
- Wake-up Timer Mode
- Standby Mode
• Operating Voltage: 2.7V ~ 5.5V (at 4.5MHz)
• Operating Frequency: 1MHz ~ 4.5MHz
• Enhanced EMS Improvement Power Fail Processor (Noise Immunity Circuit)Enhanced EMS Improvement Power Fail Processor (Noise Immunity Circuit)
• 448 Bytes of On-Chip Data RAM (Including STACK Area)
• Minimum Instruction Execution time:
- 1uS at 4MHz (2cycle NOP Instruction)
• One 8-bit Basic Interval Timer
• One 7-bit Watch Dog Timer
• Two 8-bit Timer/Counters
• 10-bit High Speed PWM Output
• One 8-bit Serial Peripheral Interface
• Two External Interrupt Ports
• One Programmable 6-bit Buzzer Driving Port
• 38 I/O Lines
- 34 Programmable I/O pins (Included 21 high-voltage pins Max. 40V)
- Three Input Only pins: 1 high-voltage pin
- One Output Only pin
• Eight Interrupt Sources
- Two External Sources (INT0, INT1)
- Two Timer/Counter Sources (Timer0, Timer1)
- Four Functional Sources (SPI,ADC,WDT,BIT)
• 8-Channel 8-bit On-Chip Analog to Digital Converter
• Oscillator:
- Crystal
- Ceramic Resonator
- External R Oscillator
• Low Power Dissipation Modes
- STOP mode
- Wake-up Timer Mode
- Standby Mode
• Operating Voltage: 2.7V ~ 5.5V (at 4.5MHz)
• Operating Frequency: 1MHz ~ 4.5MHz
• Enhanced EMS Improvement Power Fail Processor (Noise Immunity Circuit)Enhanced EMS Improvement Power Fail Processor (Noise Immunity Circuit)
GMS81C2112 Connection Diagram
GMS81C2120 General Description
The GMS81C2020 and GMS81C2120 are an advanced CMOS 8-bit microcontroller with 20K/12K bytes of ROM. These are a powerful microcontroller which provides a highly flexible and cost effective solution to many VFD applications. These provide the following standard features: 20K/12K bytes of ROM, 448 bytes of RAM, 8-bit timer/counter, 8-bit A/D converter, 10-bit High Speed PWM Output, Programmable Buzzer Driving Port, 8-bit Basic Interval Timer, 7-bit Watch dog Timer, 8-bit, Serial Peripheral Interface, on-chip oscillator and clock circuitry. They also come with high voltage I/O pins that can directly drive a VFD(Vacuum Fluorescent Display). In addition, the GMS81C2020 and GMS81C2120 support power saving modes to reduce power consumption.
GMS81C2120 Maximum Ratings
Supply Voltage : VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 to + 7.0V
Storage Temperature : TSTG . . . . . . . . . . . . . . . . . . . . . . -40 to + 125 °C
Voltage on any pin with respect to Ground ( VSS ) . . . . . . -0.3 to VDD + 0.3V
IOL per I/O Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these of any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Storage Temperature : TSTG . . . . . . . . . . . . . . . . . . . . . . -40 to + 125 °C
Voltage on any pin with respect to Ground ( VSS ) . . . . . . -0.3 to VDD + 0.3V
IOL per I/O Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these of any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
GMS81C2120 Features
• 20K/12K bytes ROM(EPROM)
• 448 Bytes of On-Chip Data RAM (Including STACK Area)
• Minimum Instruction Execution time :
- 1uS at 4MHz ( 2cycle NOP Instruction )
• One 8-Bit Basic Interval Timer
• One 7-Bit Watch Dog Timer
• Two 8-Bit Timer/Counters
• 10-Bit High Speed PWM Output
• One 8-bit Serial Peripheral Interface
• Two external interrupt ports
• One Programmable 6-Bit Buzzer Driving port
• 60 I/O Lines
- 56 Programmable I/O pins 30 high-voltage pins (40V,max)
- 3 Input Only pins : 1 high-voltage pin
- 1 Output Only pin
• Eight Interrupt Sources
- 2 By External Sources (INT0, INT1)
- 2 By Timer/Counter Sources (Timer0, Timer1)
- 4 By Functional Sources (SPI,ADC,WDT,BIT)
• 12-Channel 8-Bit On-Chip Analog to Digital Converter
• Oscillatior :
- Crystal
- Ceramic Resonator
- External RC Oscillator
- Internal RCWDT Oscillatior
• Low Power Dissipation Modes
- STOP mode
- Wake-up Timer Mode
- Standby Mode
- Watch Mode
- Subactive Mode
• Operating Voltage : 4.0V ~ 5.5V (at 4.5MHz)
• Operating Frequency : 0.4MHz ~ 4.5MHz
• Subclock : 32.768KHz Crystal Oscillator
• Enhanced EMS Improvement Power Fail Processor ( Noise Immunity Circuit )
• 448 Bytes of On-Chip Data RAM (Including STACK Area)
• Minimum Instruction Execution time :
- 1uS at 4MHz ( 2cycle NOP Instruction )
• One 8-Bit Basic Interval Timer
• One 7-Bit Watch Dog Timer
• Two 8-Bit Timer/Counters
• 10-Bit High Speed PWM Output
• One 8-bit Serial Peripheral Interface
• Two external interrupt ports
• One Programmable 6-Bit Buzzer Driving port
• 60 I/O Lines
- 56 Programmable I/O pins 30 high-voltage pins (40V,max)
- 3 Input Only pins : 1 high-voltage pin
- 1 Output Only pin
• Eight Interrupt Sources
- 2 By External Sources (INT0, INT1)
- 2 By Timer/Counter Sources (Timer0, Timer1)
- 4 By Functional Sources (SPI,ADC,WDT,BIT)
• 12-Channel 8-Bit On-Chip Analog to Digital Converter
• Oscillatior :
- Crystal
- Ceramic Resonator
- External RC Oscillator
- Internal RCWDT Oscillatior
• Low Power Dissipation Modes
- STOP mode
- Wake-up Timer Mode
- Standby Mode
- Watch Mode
- Subactive Mode
• Operating Voltage : 4.0V ~ 5.5V (at 4.5MHz)
• Operating Frequency : 0.4MHz ~ 4.5MHz
• Subclock : 32.768KHz Crystal Oscillator
• Enhanced EMS Improvement Power Fail Processor ( Noise Immunity Circuit )
GMS81C2120 Connection Diagram
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