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FX8-40P-SV(92), FX851, FX852

Table of contents:
Info of FX8-40P-SV(92)
Info of FX851
Info of FX852

FX8-40P-SV(92), FX851, FX852 Selling Leads, Datasheet

MFG:HRS Package Cooled:SMD D/C:08+

FX8-40P-SV(92), FX851, FX852 Datasheet download

Five Points

Part Number: FX8-40P-SV(92)

MFG: HRS

Package Cooled: SMD

D/C: 08+

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FX8-40P-SV(92) FX851 FX852
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FX851 Maximum Ratings

Parameter	Symbol	Conditions	Ratings	Unit
[MOSFET]
Drain-to-Source Voltage	V_DSS		-30	V
Gate-to-Source Voltage	V_GSS		±15	V
Drain Current (DC)	I_D		-1	A
Drain Current (Pulse)	I_DP	PW10s, duty cycle1%	-4	A
Allowable Power Dissipation	P_D	Tc=25°C	6	W
Allowable Power Dissipation	P_D	Mounted on ceramic board (750mm^2*0.8mm)	1.5	W
Channel Temperature	T_ch		150
Storage Temperature	T_stg		55 to +150
[SBD]
Repetitive Peak Reverse Voltage	V_RRM		30	V
Non-repetitive Peak Reverse Surge Voltage	V_RSM		35	V
Average Rectified Current	I_O		700	mA
Surge Forward Current	I_FSM	50Hz sine wave, 1cycle	5	A
Junction Temperature	T_j		55 to +125
Storage Temperature	T_stg		55 to +125

FX851 Features

· Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.

· The FX851 is formed with 2 chips, one being equivalent to the 2SJ187 and the other the SB07-03P,placed in one package.

FX851 Connection Diagram

FX852 Maximum Ratings

Parameter	Symbol	Conditions	Ratings	Unit
[MOSFET]
Drain-to-Source Voltage	V_DSS		30	V
Gate-to-Source Voltage	V_GSS		±15	V
Drain Current (DC)	I_D		2	A
Drain Current (Pulse)	I_DP	PW10s, duty cycle1%	8	A
Allowable Power Dissipation	P_D	Tc=25°C	6	W
Allowable Power Dissipation	P_D	Mounted on ceramic board (750mm^2*0.8mm)	1.5	W
Channel Temperature	T_ch		150
Storage Temperature	T_stg		55 to +150
[SBD]
Repetitive Peak Reverse Voltage	V_RRM		30	V
Non-repetitive Peak Reverse Surge Voltage	V_RSM		35	V
Average Rectified Current	I_O		700	mA
Surge Forward Current	I_FSM	50Hz sine wave, 1cycle	5	A
Junction Temperature	T_j		55 to +125
Storage Temperature	T_stg		55 to +125

FX852 Features

· Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.

· The FX852 is formed with 2 chips, one being equivalent to the 2SK1467 and the other the SB07-03P, placed in one package

FX852 Connection Diagram

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