FMC7G20US60, FMC7G25US120, FMC7G30US60 Selling Leads, Datasheet
MFG:FAIRCHILD D/C:07+
FMC7G20US60, FMC7G25US120, FMC7G30US60 Datasheet download
Part Number: FMC7G20US60
MFG: FAIRCHILD
Package Cooled:
D/C: 07+
MFG:FAIRCHILD D/C:07+
FMC7G20US60, FMC7G25US120, FMC7G30US60 Datasheet download
MFG: FAIRCHILD
Package Cooled:
D/C: 07+
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PDF/DataSheet Download
Datasheet: FMC7G20US60
File Size: 666500 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FMC1819LN-02
File Size: 115762 KB
Manufacturer: Fujitsu
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FMC7G30US60
File Size: 678639 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Symbol | Description | FMC7G10US60 | Units | |
Inverter & Brake |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | +20 | V | |
IC | Collector Current@ TC = 25°C | 32 | A | |
ICM(1) | Pulsed Collector Current | 40 | A | |
IF | Diode Continuous Forward Current @ TC = 100°C | 20 | A | |
IFM | Diode Maximum Forward Current | 10 | A | |
TSC | Short Circuit Withstand Time @ TC = 100°C | 56 | US | |
PD | Maximum Power Dissipation @ TC = 25°C | 1250 | W | |
Converter | VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IO | Average Output Rectified Current | 20 | V | |
IFSM | Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive |
260 | A | |
I2t | 1 Cycle Surge Current | 280 | A2s | |
Common | TJ | Operating Junction Temperature | -40 to +150 | °C |
Tstg | Storage Temperature Range | -40 to +125 | °C | |
Viso | Isolation Voltage @ AC 1minute | 2500 | V | |
MountingTorque | Mounting part Screw @ M4 | 2 | N.m |
Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Symbol | Description | FMC7G10US60 | Units | |
Inverter & Brake |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | +20 | V | |
IC | Collector Current@ TC = 25°C | 30 | A | |
ICM(1) | Pulsed Collector Current | 60 | A | |
IF | Diode Continuous Forward Current @ TC = 100°C | 30 | A | |
IFM | Diode Maximum Forward Current | 60 | A | |
TSC | Short Circuit Withstand Time @ TC = 100°C | 10 | US | |
PD | Maximum Power Dissipation @ TC = 25°C | 125 | W | |
Converter | VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IO | Average Output Rectified Current | 30 | V | |
IFSM | Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive |
300 | A | |
I2t | 1 Cycle Surge Current | 369 | A2s | |
Common | TJ | Operating Junction Temperature | -40 to +150 | °C |
Tstg | Storage Temperature Range | -40 to +125 | °C | |
Viso | Isolation Voltage @ AC 1minute | 2500 | V | |
MountingTorque | Mounting part Screw @ M4 | 1.25 | N.m |