FM180, FM1808, FM1808-120-PG Selling Leads, Datasheet
MFG:RECTRON Package Cooled:SMA/DO-214AC D/C:09+
FM180, FM1808, FM1808-120-PG Datasheet download
Part Number: FM180
MFG: RECTRON
Package Cooled: SMA/DO-214AC
D/C: 09+
FM180, FM1808, FM1808-120-PG
- Table of contents:
Info of FM180
Info of FM1808
Info of FM1808-120-PG
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About FM180
PDF/DataSheet Download
Datasheet: FM180
File Size: 70531 KB
Manufacturer: FORMOSA [Formosa MS]
Download : Click here to Download
About FM1808
PDF/DataSheet Download
Datasheet: FM1808
File Size: 92060 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About FM1001-7R
PDF/DataSheet Download
Datasheet: FM1001-7R
File Size: 150434 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
FM180 Maximum Ratings
| RATINGS | SYMBOL | FMB120 | FMB130 | FMB140 | FMB150 | FMB160 | FMB180 | FMB1100 | UNITS |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 20 | 30 | 40 | 50 | 60 | 80 | 100 | Volts |
| Maximum RMS Voltage | VRMS | 14 | 21 | 28 | 35 | 42 | 56 | 70 | Volts |
| Maximum DC Blocking Voltage | VDC | 20 | 30 | 40 | 50 | 60 | 80 | 100 | Volts |
| Maximum Average Forward Rectified Current at Derating Lead Temperature |
IO | 1.0 | Amps | ||||||
| Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) |
IFSM | 40 | Amps | ||||||
| Typical Thermal Resistance (Note 1) | RqJA | 50 | /W | ||||||
| Typical Junction Capacitance (Note 2) | CJ | 100 | pF | ||||||
| Operating Temperature Range | TJ | -65 to + 125 | -65 to + 150 | ||||||
| Storage Temperature Range | TSTG | -65 to + 150 | |||||||
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
FM180 Features
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.09 gram
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.09 gram
FM1808 General Description
The FM1808 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. It's fast write and high write endurance makes it superior to other types of nonvolatile memory.
In-system operation of the FM1808 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the FM1808 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. The FM1808 offers guaranteed operation over an industrial temperature range of -40°C to +85°C.
FM1808 Maximum Ratings
| Description | Ratings |
| Ambient storage or operating temperature | -40°C to + 85°C |
| Voltage on any pin with respect to ground | -1.0V to +7.0V |
| Lead temperature (Soldering, 10 seconds) | 300° C |
FM1808 Features
· Organized as 32,768 x 8 bits
· High endurance 10 Billion (1010) read/writes
· 10 year data retention at 85° C
· NoDelay™ write
· Advanced high-reliability ferroelectric process
· High endurance 10 Billion (1010) read/writes
· 10 year data retention at 85° C
· NoDelay™ write
· Advanced high-reliability ferroelectric process
FM1808 Typical Application
As a true nonvolatile RAM, the FM18L08 fits into many diverse applications. Clearly, its monolithic nature and high performance make it superior to battery-backed SRAM in most every application. Unlimited endurance allows the FM18L08 to be used in applications that could not take advantage of the previous generation of RAM products. This applications guide is intended to facilitate the transition from BBSRAM to FRAM. It is divided into two parts. First is a treatment of the advantages of FRAM memory compared with battery-backed SRAM. Second is a design guide, which highlights the simple design considerations that should be reviewed in both retrofit and new design situations.
FM1808 Connection Diagram
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