FLM7785-4C/D, FLM7785-4F, FLM7785-6F Selling Leads, Datasheet
MFG:FUJITSU Package Cooled:N/A D/C:N/A
FLM7785-4C/D, FLM7785-4F, FLM7785-6F Datasheet download
Part Number: FLM7785-4C/D
MFG: FUJITSU
Package Cooled: N/A
D/C: N/A
FLM7785-4C/D, FLM7785-4F, FLM7785-6F
- Table of contents:
Info of FLM7785-4C/D
Info of FLM7785-4F
Info of FLM7785-6F
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About FLM 1
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Datasheet: FLM 1
File Size: 35846 KB
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About FLM7785-4F
PDF/DataSheet Download
Datasheet: FLM7785-4F
File Size: 242022 KB
Manufacturer: EUDYNA [Eudyna Devices Inc]
Download : Click here to Download
About FLM7785-6F
PDF/DataSheet Download
Datasheet: FLM7785-6F
File Size: 241399 KB
Manufacturer: EUDYNA [Eudyna Devices Inc]
Download : Click here to Download
FLM7785-4F General Description
The FLM7785-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
FLM7785-4F Maximum Ratings
|
Item |
Symbol |
Condition |
Rating |
Unit |
|
Drain-Source Voltage |
VDS |
15 |
V | |
|
Gate-Source Voltage |
VGS |
-5 |
V | |
|
Total Power Dissipation |
PT |
Tc = 25°C |
25.0 |
W |
|
Storage Temperature |
Tstg |
-65 to +175 |
°C | |
|
Channel Temperature |
Tch |
175 |
°C |
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100.
FLM7785-4F Features
• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 35% (Typ.)
• Low IM3 = -46dBc@Po = 25.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 35% (Typ.)
• Low IM3 = -46dBc@Po = 25.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
FLM7785-6F General Description
The FLM7785-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
FLM7785-6F Maximum Ratings
|
Item |
Symbol |
Condition |
Rating |
Unit |
|
Drain-Source Voltage |
VDS |
15 |
V | |
|
Gate-Source Voltage |
VGS |
-5 |
V | |
|
Total Power Dissipation |
PT |
Tc = 25°C |
31.2 |
W |
|
Storage Temperature |
Tstg |
-65 to +175 |
°C | |
|
Channel Temperature |
Tch |
175 |
°C |
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with gate resistance of 100.
FLM7785-6F Features
• High Output Power: P1dB = 38.5dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 31% (Typ.)
• Low IM3 = -46dBc@Po = 27.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 31% (Typ.)
• Low IM3 = -46dBc@Po = 27.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
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