FLM5972-8F, FLM6471-18F, FLM6471-4F Selling Leads, Datasheet
MFG:Eudyna D/C:07+
FLM5972-8F, FLM6471-18F, FLM6471-4F Datasheet download
Part Number: FLM5972-8F
MFG: Eudyna
Package Cooled:
D/C: 07+
FLM5972-8F, FLM6471-18F, FLM6471-4F
- Table of contents:
Info of FLM5972-8F
Info of FLM6471-18F
Info of FLM6471-4F
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About FLM5972-8F
PDF/DataSheet Download
Datasheet: FLM5972-8F
File Size: 266304 KB
Manufacturer: EUDYNA [Eudyna Devices Inc]
Download : Click here to Download
About FLM 1
PDF/DataSheet Download
Datasheet: FLM 1
File Size: 35846 KB
Manufacturer:
Download : Click here to Download
About FLM 1
PDF/DataSheet Download
Datasheet: FLM 1
File Size: 35846 KB
Manufacturer:
Download : Click here to Download
FLM5972-8F General Description
The FLM5972-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
FLM5972-8F Maximum Ratings
| Item | Symbol | Condition | Rating | Unit |
| Drain-Source Voltage | VDS | 15 | V | |
| Gate-Source Voltage | VGS | -5 | V | |
| Total Power Dissipation | PT | Tc = 25°C | 42.8 | W |
| Storage Temperature | Tstg | -65 to +175 | ||
| Channel Temperature | Tch | 175 |
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω.
FLM5972-8F Features
• High Output Power: P1dB = 39.0dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 31% (Typ.)
• Low IM3 = -45dBc@Po = 28.0dBm
• Broad Band: 5.9 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: add = 31% (Typ.)
• Low IM3 = -45dBc@Po = 28.0dBm
• Broad Band: 5.9 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
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