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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
FDP8870 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
156
A
Continuous (TC = 25 , VGS = 10V)
Continuous (TC = 100 , VGS = 10V)
147
A
Continuous (Tamb = 25 , VGS = 10V, RJA = 62 /W)
19
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
300
mJ
PD
Power dissipation
160
W
Derate above 25
1.07
W/
TJ , TSTG
Operating and Storage Temperature
-55to 175
FDP8870 Features
* r DS(ON) = 4.1mW , VGS= 10V, ID = 35A * r DS(ON) = 4.6mW, VGS = 4.5V, ID = 35A * High performance trench technology for extremely low r DS(ON) * Low gate charge * High power and current handling capability
FDP8870 Typical Application
* DC/DC converters
FDP8874 Parameters
Technical/Catalog Information
FDP8874
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
114A
Rds On (Max) @ Id, Vgs
5.3 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds
3130pF @ 15V
Power - Max
110W
Packaging
Tube
Gate Charge (Qg) @ Vgs
72nC @ 10V
Package / Case
TO-220AB
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDP8874 FDP8874
FDP8874 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
FDP8874 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
114
A
Continuous (TC = 25, VGS = 10V)
Continuous (TC = 100, VGS = 10V)
102
A
Continuous (Tamb = 25 , VGS = 10V, RJA = 62/W)
16
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 2)
105
mJ
PD
Power dissipation
110
W
Derate above 25
0.73
W/
TJ , TSTG
Operating and Storage Temperature
-55to 175
FDP8874 Features
* r DS(ON) = 5.3mW , VGS= 10V, ID = 40A * r DS(ON) = 6.6mW ,VGS = 4.5V, ID = 40A * High performance trench technology for extremely low r DS(ON) * Low gate charge * High power and current handling capability