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FDP6644, FDP6644S, FDP6670AL

Table of contents:
Info of FDP6644
Info of FDP6644S
Info of FDP6670AL

FDP6644, FDP6644S, FDP6670AL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FDP6644, FDP6644S, FDP6670AL Datasheet download

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Part Number: FDP6644

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 30V LL TO-220

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FDP6644 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS_(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDP6644 Maximum Ratings

Symbol	Parameter	FDP6644	FDB6644	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	± 16		V
I_D	Drain Current - Continuous (Note 1) - Pulsed (Note 1)	50		A
		150
P_D	Total Power Dissipation @ T_C=25 Derate above 25	125		W
		83		W/
T_J, T_stg	Operating and Storage Temperature Range	-65 to +175

FDP6644 Features

· 50 A, 30 V. R _DS(ON)= 8.5 mW @ V_GS = 10 V
R _DS(ON)=10.5 mW @ V_GS = 4.5 V
· Low gate charge (27 nC typical)
· Fast switching speed
· High performance trench technology for extremely low R _DS(ON)· 175°C maximum junction temperature rating

FDP6644S General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R _DS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6644S/FDB6644S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6644/FDB6644 in parallel with a Schottky diode.

FDP6644S Maximum Ratings

Symbol	Parameter	Ratings	Unit
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±16	V
I_D	Drain Current - Continuous (Note 1) Pulsed (Note 1)	55	A
I_D	Drain Current - Continuous (Note 1) Pulsed (Note 1)	150	A
P_D	Power Dissipation (T_C= 25) - Derate above 25	60	W
P_D	Power Dissipation (T_C= 25) - Derate above 25	0.48	W/
T_J,T_STG	Operating and Storage Temperature Range	-65to+125
T_L	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	275

FDP6644S Features

* 28 A, 30 V. R _DS(ON) = 10 m W @ VGS = 10 V
R _DS(ON) = 12 m W @ V_GS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (27nC typical)
* High performance trench technology for extremely low R _DS(ON) and fast switching
* High power and current handling capability

FDP6670AL Parameters

Technical/Catalog Information	FDP6670AL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	2440pF @ 15V
Power - Max	68W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP6670AL FDP6670AL

FDP6670AL General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDP6670AL Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	80	A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	240	A
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	68	W
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	0.45	W/
T_J, T_STG	Operating and Storage Junction Temperature Range	65 to +175

FDP6670AL Features

*80 A, 30 V R_DS(ON) = 6.5 m @ V_GS = 10 V
R_DS(ON) = 8.5 m @ V_GS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely low R_DS(ON)*175 maximum junction temperature rating

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