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FDP6035, FDP6035AL, FDP6035L

Table of contents:
Info of FDP6035
Info of FDP6035AL
Info of FDP6035L

FDP6035, FDP6035AL, FDP6035L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:

FDP6035, FDP6035AL, FDP6035L Datasheet download

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Part Number: FDP6035

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C:

Description: MOSFET N-CH 30V TO-220

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FDP6035AL Parameters

Technical/Catalog Information	FDP6035AL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	12 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds	1250pF @ 15V
Power - Max	52W
Packaging	Tube
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP6035AL FDP6035AL

FDP6035AL General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDP6035AL Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	48	A
I_D	Drain Current Continuous (Note 1) Pulsed (Note 1)	180	A
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	52	W
P_D	Total Power Dissipation @ T_C = 25 Derate above 25	0.3	W/
T_J, T_STG	Operating and Storage Junction Temperature Range	-65 to +175

FDP6035AL Features

*48 A, 30 V R_DS(ON) = 12 m @ V_GS = 10 V
R_DS(ON) = 14 m @ V_GS = 4.5 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely ow R_DS(ON)*175 maximum junction temperature rating

FDP6035L General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FDP6035L Maximum Ratings

Symbol	Parameter	FDP6035L	FDB6035L	Units
V_DSS	Drain-Source Voltage	30		V
V_GSS	Gate-Source Voltage	±20		V
I_D	Drain Current - Continuous - Pulsed	58		A
		175
P_D	Maximum Power Dissipation @ T_C= 25 Derate above 25	75		W
		0.5		W/
T_J, T_STG	Operating and Storage Temperature Range	-65 to 175

FDP6035L Features

*58 A, 30 V. R_DS(ON) = 0.011 @ V_GS =10 V
R_DS(ON) = 0.019 @ V_GS=4.5 V.
*Low gate charge (typical 34 nC).
*Low Crss (typical 175 pF).
*Fast switching speed.

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