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FDP46N30, FDP51N25, FDP52N20

Table of contents:
Info of FDP46N30
Info of FDP51N25
Info of FDP52N20

FDP46N30, FDP51N25, FDP52N20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+

FDP46N30, FDP51N25, FDP52N20 Datasheet download

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Part Number: FDP51N25

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 06+

Description: MOSFET N-CH 200V 52A TO-220

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FDP46N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

FDP46N30 Maximum Ratings

Symbol	Parameter	FDP46N30	Unit
V_DSS	Drain-Source Voltage	300	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	46 27.6	A A
I_DM	Drain Current Pulsed (Note 1)	184	A
V_GSS	Gate-Source voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1205	mJ
I_AR	I Avalanche Current (Note 1)	46	A
E_AR	Repetitive Avalanche Energy (Note 1)	41.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	417 3.3	W W/
T_J,T_STG	Operating and Storage Temperature Range	-55to+150
T_L	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	300

FDP46N30 Features

* 46A, 300V, R_DS(on) = 0.079 W @V _GS= 10 V
* Low gate charge (typical 58 nC)
* Low C_rss (typical 60 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDP51N25 Parameters

Technical/Catalog Information	FDP51N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	51A
Rds On (Max) @ Id, Vgs	60 mOhm @ 25.5A, 10V
Input Capacitance (Ciss) @ Vds	3410pF @ 25V
Power - Max	320W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP51N25 FDP51N25

FDP51N25 General Description

FDP51N25 Maximum Ratings

Symbol	Parameter	FDP51N25	Unit
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	51 30	A A
I_DM	Drain Current Pulsed (Note 1)	204	A
V_GSS	Gate-Source voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1111	mJ
I_AR	I Avalanche Current (Note 1)	51	A
E_AR	Repetitive Avalanche Energy (Note 1)	32	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	320 2.56	W W/
T_J,T_STG	Operating and Storage Temperature Range	-55to+150
T_L	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	300

FDP51N25 Features

* 51A, 250V, R _DS(on) = 0.060 W @V_GS = 10 V
* Low gate charge ( typical 55 nC)
* Low C_rss ( typical 63 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDP52N20 Parameters

Technical/Catalog Information	FDP52N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	49 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	357W
Packaging	Tube
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP52N20 FDP52N20

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