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FDP4030L, FDP42AN15A0, FDP42AN15AO

Table of contents:
Info of FDP4030L
Info of FDP42AN15A0
Info of FDP42AN15AO

FDP4030L, FDP42AN15A0, FDP42AN15AO Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:TO

FDP4030L, FDP42AN15A0, FDP42AN15AO Datasheet download

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Part Number: FDP42AN15A0

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: TO

Description: MOSFET N-CH 150V 35A TO-220AB

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FDP4030L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FDP4030L Maximum Ratings

Symbol	Parameter	FDP4030L	FDB4030L	Units
V_DSS	Drain-Source Voltage	80		V
V_GSS	Gate-Source Voltage	± 20		V
I_D	Drain Current - Continuous (Note 1) - Pulsed (Note 1)	3.0		A
		60
P_D	Total Power Dissipation @ TC = 25°C Derate above 25°C	37.5		W
		0.25		W/°C
T_J, T_stg	Operating and Storage Temperature Range	-65 to 175		°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275		°C

FDP4030L Features

20 A, 30 V. R _DS(ON)= 0.035 W @ V_GS=10 V
R _DS(ON)= 0.055 W @ V_GS=4.5V
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low R _DS(ON)
175°C maximum junction temperature rating.

FDP42AN15A0 Parameters

Technical/Catalog Information	FDP42AN15A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	42 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2150pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP42AN15A0 FDP42AN15A0

FDP42AN15A0 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	150	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (T_C = 25, V_GS = 10V)	35	A
	Continuous (T_C = 100, V_GS = 10V)	24
	Continuous (T_amb = 25, V_GS = 10V, R_JA = 43/W)	5	A
	Pulsed	Figure 4	A
E_AS	Single Pulse Avalanche Energy (Note 1)	90	mJ
P_D	Power dissipation	150	W
P_D	Derate above 25	1.00	W/°C
T_J, T_stg	Operating and Storage Temperature	-55 to 175	°C

FDP42AN15A0 Features

•r_DS(ON) = 36mΩ (Typ.), V_GS = 10V, I_D = 12A
•Q _g(tot) = 33nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDP42AN15A0 Typical Application

• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems

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