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FDP39N20, FDP4020, FDP4020P

Table of contents:
Info of FDP39N20
Info of FDP4020
Info of FDP4020P

FDP39N20, FDP4020, FDP4020P Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+

FDP39N20, FDP4020, FDP4020P Datasheet download

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Part Number: FDP39N20

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 06+

Description: MOSFET P-CH 20V 16A TO-220AB

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FDP39N20 Parameters

Technical/Catalog Information	FDP39N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	39A
Rds On (Max) @ Id, Vgs	66 mOhm @ 19.5A, 10V
Input Capacitance (Ciss) @ Vds	2130pF @ 25V
Power - Max	251W
Packaging	Tube
Gate Charge (Qg) @ Vgs	49nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP39N20 FDP39N20

FDP39N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

FDP39N20 Maximum Ratings

Symbol	Parameter	FDP39N20	Unit
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	39 23.4	A A
I_DM	Drain Current Pulsed (Note 1)	156	A
V_GSS	Gate-Source voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	860	mJ
I_AR	I Avalanche Current (Note 1)	39	A
E_AR	Repetitive Avalanche Energy (Note 1)	25.1	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	251 2.0	W W/
T_J,T_STG	Operating and Storage Temperature Range	-55to+150	°C
T_L	Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds	300	°C

FDP39N20 Features

* 39A, 300V, R _DS(on) = 0.066W @V_GS = 10 V
* Low gate charge ( typical 38 nC)
* Low C_rss ( typical 57 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDP4020P Parameters

Technical/Catalog Information	FDP4020P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	80 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	665pF @ 10V
Power - Max	37.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 4.5V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDP4020P FDP4020P

FDP4020P General Description

This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel.

FDP4020P Maximum Ratings

Symbol	Parameter	FDP4020P	FDB4020P	Units
V_DSS	Drain-Source Voltage	-20		V
V_GSS	Gate-Source Voltage	±8		V
I_D	Drain Current - Continuous - Pulsed	-16		A
		-48
P_D	Total Power Dissipation @ T_C= 25	37.5		W
	Derate above 25	0.25		W/
T_J, T_STG	Operating and Storage Junction Temperature Range	-65 to +175

FDP4020P Features

* -16 A, -20 V. R_DS(on) = 0.08 @ V_GS= -4.5 V
R_DS(on) = 0.11 @ V_GS = -2.5 V.
* Critical DC electrical parameters specified at elevated temperature.
* High density cell design for extremely low R_DS(on)
* TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.
* 175°C maximum junction temperature rating.

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