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• r DS(ON)= 14mΩ (Typ.), VGS= 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS=10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
FDP3652 Typical Application
• DC/DC Converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems
FDP3672 Parameters
Technical/Catalog Information
FDP3672
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
105V
Current - Continuous Drain (Id) @ 25° C
41A
Rds On (Max) @ Id, Vgs
33 mOhm @ 41A, 10V
Input Capacitance (Ciss) @ Vds
1670pF @ 25V
Power - Max
135W
Packaging
Tube
Gate Charge (Qg) @ Vgs
37nC @ 10V
Package / Case
TO-220AB
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDP3672 FDP3672
FDP3672 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
105
V
VGS
Gate to Source Voltage
20
V
ID
Drain Current
41
A
Continuous (TC = 25 , VGS = 10V)
Continuous (TC = 100 , VGS = 10V)
31
A
Continuous (Tamb = 25 , VGS = 10V, RJA = 62/W)
5.9
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
48
mJ
PD
Power dissipation
135
W
Derate above 25
0.9
W/
TJ , TSTG
Operating and Storage Temperature
-55to 175
FDP3672 Features
* r DS(ON) = 25mW (Typ.), VGS = 10V, ID = 41A * Qg(tot) = 28nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * Optimized efficiency at high frequencies * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101
FDP3672 Typical Application
* DC/DC converters and Off-Line UPS * Distributed Power Architectures and VRMs * Primary Switch for 24V and 48V Systems * High Voltage Synchronous Rectifier * Direct Injection / Diesel Injection Systems * 42V Automotive Load Control * Electronic Valve Train Systems
FDP3682 Parameters
Technical/Catalog Information
FDP3682
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
32A
Rds On (Max) @ Id, Vgs
36 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds
1250pF @ 25V
Power - Max
95W
Packaging
Tube
Gate Charge (Qg) @ Vgs
28nC @ 10V
Package / Case
TO-220AB
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDP3682 FDP3682
FDP3682 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
32
A
Continuous (TC = 100, VGS = 10V)
23
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
6
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
55
mJ
PD
Power dissipation
95
W
Derate above 25
0.63
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C
FDP3682 Features
• r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Q g(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
FDP3682 Typical Application
• DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection System • 42V Automotive Load Control • Electronic Valve Train System
