MFG:Fairchild Semiconductor Category:Transistors, FETs, IGBTs Package Cooled:TO247 D/C:06+
FCH20N60, FCH20P04Q, FCH20P06Q Datasheet download
Category: Transistors, FETs, IGBTs
MFG: Fairchild Semiconductor
Package Cooled: TO247
D/C: 06+
Description: MOSFET N-CHAN 600V TO-247
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PDF/DataSheet Download
Datasheet: FCH20N60
File Size: 711345 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCH05A10
File Size: 67795 KB
Manufacturer: NIEC [Nihon Inter Electronics Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCH05A10
File Size: 67795 KB
Manufacturer: NIEC [Nihon Inter Electronics Corporation]
Download : Click here to Download
| Technical/Catalog Information | FCH20N60 |
| Vendor | Fairchild Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-247AD |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 20.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 190 mOhms @ 10A, 10V |
| Rds On (Typ) @ Id, Vgs | 150 mOhms @ 10A, 10V |
| Input Capacitance (Ciss) | 3080.0 pF @ 25.0 V |
| Gate Charge (Qg) | 98.00 nC @ 10.0 V |
| Power Dissipation | 208.000 W [Max] |
| Packaging | Tube |
| Protection Diode(s) | Drain to Source |
| Delay Time On | 62.00 ns [Typ] |
| Delay Time Off | 230.00 ns [Typ] |
| Rise Time | 140.000 ns [Typ] |
| Fall Time | 65.000 ns [Typ] |
| Vgs Min. | 3.00 V @ 250.0 A |
| Vgs Max. | 5.00 V @ 250.0 A |
| Drain Peak Current (Idm) | 60.000 A [Nom] |
| Operating Junction Temperature | -55 °C [Min] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCH20N60 FCH20N60 |
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize con- duction loss, provide superior switching performance, and with- stand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system min- iaturization and higher efficiency.
| Symbol | Parameter | FCH20N60 | FCA20N60 | Unit |
| VDSS |
Drain-Source Voltage | 600 | V | |
| ID |
Drain Current - Continuous (TC = 25 ) - Continuous (TC = 100 ) |
20 12.5 |
A A | |
| IDM |
Drain Current - Pulsed (Note 1) | 60 | A | |
| VGSS |
Gate-Source voltage | ±30 | V | |
| EAS |
Single Pulsed Avalanche Energy (Note 2) | 690 |
mJ | |
| IAR |
Avalanche Current (Note 1) | 20 |
A | |
| EAR |
Repetitive Avalanche Energy (Note 1) | 20.8 | mJ | |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
| PD |
Power Dissipation (T = 25) - Derate above 25°C |
208 1.67 |
W W/°C | |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds |
300 | °C | |
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