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F1208, F1209D-1W, F1209D-2W

Table of contents:
Info of F1208
Info of F1209D-1W
Info of F1209D-2W

F1208, F1209D-1W, F1209D-2W Selling Leads, Datasheet

MFG:Polyfet Package Cooled:DIP D/C:09+

F1208, F1209D-1W, F1209D-2W Datasheet download

Five Points

Part Number: F1208

MFG: Polyfet

Package Cooled: DIP

D/C: 09+

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F1208 F1209D-1W F1209D-2W
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F1208 General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"^TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance

F1208 Maximum Ratings

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
170 Watts	1.05/W	200	-65 to 150	8 A	50V	50V	30V

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